SGS Thomson Microelectronics SD1391 Datasheet

.470 MHZ

.24 VOLTS

.EFFICIENCY 50% MIN.

.P

OUT =

15W WITH11.0dBMIN.GAIN

.CLASS AB

. COMMON EMITTER

SD1391

RF & MICROWAVE TRANSISTORS

UHF BASE ST ATION APPLIC ATIONS

P RE LIMINARY DATA

.230 x .360 6LFL (M142)

OR DER CODE

SD1391

PI N CONNECTI O N

DESCRIP TION

The SD1391 is a goldmetallized NPNplanar tran­sistor using diffused emitter ballast resistors for
reliability and ruggedness.

The SD1391 is specifically designed as a low
power, high gain driver and can be operated in
Class A, B or C.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V
V
V

P

T

CBO
CEO
EBO

I

C

DISS

T

J

STG

Collector-BaseVoltage 48 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3.5 V
Collector Current 2.5 A
Power Dissipation (+25°C) 29 W
Junction Temperature +200
Storage Temperature

case

= 25°C)

1. Collector 3. Emitter

2. Base

− 65 to +150

BRANDING

SD1391

°

C

°

C

THERMAL DATA

R

TH(j-c)

August 23, 1996

Junction-CaseThermal Resistance 6.0 °

C/W

1/5

SD 1391

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol Tes t Conditions

BV
BV
BV

I

CBO

h

CBO
CEO

EBO

FE

IC= 50 mA IE= 0mA
IC= 20 mA IB= 0mA
IE= 5mA IC= 0mA
VCB= 24 V IE= 0mA
VCE= 10 V IC= 0.1 A

DYNAMIC

Symbol Test Conditions

P

OUT f = 470 MHz P

η

C f=470 MHz P

R

TL f = 470 MHz P

C

OB f = 1 MHz V

=6.3W VCC= 24V ICQ=50mA

IN

=6.3W VCC= 24V ICQ=50mA

IN

=6.3W VCC= 24V ICQ=50mA

IN

= 24 V

CB

Value

Min. Typ. Max.

Un it

48 — — V
25 — — V

3.5 — — V
— — 1.0 mA

10 — 100 —

Va lue

Min. Typ. Max.

Un it

15——W
50 60 %
10 — dB
——24pF

2/5