SGS Thomson Microelectronics SD1391 Datasheet
.470 MHZ
.24 VOLTS
.EFFICIENCY 50% MIN.
.P
OUT =
15W WITH11.0dBMIN.GAIN
.CLASS AB
. COMMON EMITTER
SD1391
RF & MICROWAVE TRANSISTORS
UHF BASE ST ATION APPLIC ATIONS
P RE LIMINARY DATA
.230 x .360 6LFL (M142)
OR DER CODE
SD1391
PI N CONNECTI O N
DESCRIP TION
The SD1391 is a goldmetallized NPNplanar transistor using diffused emitter ballast resistors for
reliability and ruggedness.
The SD1391 is specifically designed as a low
power, high gain driver and can be operated in
Class A, B or C.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-BaseVoltage 48 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3.5 V
Collector Current 2.5 A
Power Dissipation (+25°C) 29 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base
− 65 to +150
BRANDING
SD1391
°
C
°
C
THERMAL DATA
R
TH(j-c)
August 23, 1996
Junction-CaseThermal Resistance 6.0 °
C/W
1/5
SD 1391
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Tes t Conditions
BV
BV
BV
I
CBO
h
CBO
CEO
EBO
FE
IC= 50 mA IE= 0mA
IC= 20 mA IB= 0mA
IE= 5mA IC= 0mA
VCB= 24 V IE= 0mA
VCE= 10 V IC= 0.1 A
DYNAMIC
Symbol Test Conditions
P
OUT f = 470 MHz P
η
C f=470 MHz P
R
TL f = 470 MHz P
C
OB f = 1 MHz V
=6.3W VCC= 24V ICQ=50mA
IN
=6.3W VCC= 24V ICQ=50mA
IN
=6.3W VCC= 24V ICQ=50mA
IN
= 24 V
CB
Value
Min. Typ. Max.
Un it
48 — — V
25 — — V
3.5 — — V
— — 1.0 mA
10 — 100 —
Va lue
Min. Typ. Max.
Un it
15——W
50 60 %
10 — dB
——24pF
2/5
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