SGS Thomson Microelectronics SD1390 Datasheet
August 23, 1996
RF & MICROWAVE TRANSISTORS
UHF BASE ST ATION APPLIC ATIONS
.470 MHZ
.24 VOLTS
.P
OUT =
1.5 W WITH 13.0 dB MIN. GAIN
.CLASS A
. COMMON EMITTER
.POWER SATURATION 2.2 W MIN.
P RE LIMINARY DATA
DESCRIP TION
The SD1390 is a goldmetallized NPNplanar transistor using diffused emitter ballast resistors for
reliability and ruggedness.
The SD1390 is specifically designed as a low
power, high gain driver and can be operated in
Class A, B or C.
PI N CONNECTI O N
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C)
Symbol Parameter Value Unit
V
CBO
Collector-BaseVoltage 40 V
V
CEO
Collector-Emitter Voltage 24 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Collector Current 0.35 A
P
DISS
Power Dissipation (T
C ≤
+75°C) 8.33 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +150
°
C
R
TH(j-c)
Junction-CaseThermal Resistance 12 °
C/W
SD1390
1. Collector 3. Base
2. Emitter 4. Emitter
THERMAL DATA
.280 x 4LSL (M123)
OR DER CODE
SD1390
BRANDING
SD1390
1/5
STATIC
DYNAMIC
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
Symbol Test Conditions
Va lue
Un it
Min. Typ. Max.
P
OUT f = 470 MHz P
IN
=75mW VCC= 24V ICQ=200mA
1.5 — — W
C
OB f = 1 MHz V
CB
= 28 V
— — 5.0 pF
Symbol Tes t Conditions
Value
Un it
Min. Typ. Max.
BV
CBO
IC= 1mA IE= 0mA
40 — — V
BV
CEO
IC= 1mA IB= 0mA
24 — — V
BV
EBO
IE= 1mA IC= 0mA
3.5 — — V
I
CBO
VCB= 24 V IE= 0mA
— — 1.0 mA
h
FE
VCE= 5V IC= 0.1 A
20 — 120 —
SD 1390
2/5
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