SGS Thomson Microelectronics SD1285 Datasheet
.30 MHz
.12.5 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.IMD − 30 dB
.P
= 20 W MIN . WITH 15 dB GAIN
OUT
SD1285
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.380 4LFL (M113)
epoxy sealed
ORDER CO DE
SD1285
PIN CONNECTION
BRANDING
SD1285
DESCRIPTION
The SD1285 is a 12.5 V epitaxial NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting to
achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 18 V
Emitter-Base Voltage 4.0 V
Device Current 4.5 A
Power Dissipation 80 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 2.2 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
October 1992
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SD1285
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CES
h
FE
= 50mA IE = 0mA 36 — — V
= 50mA VBE = 0V 36 — — V
= 50mA IB = 0mA 18 — — V
= 5mA IC = 0mA 4.0 — — V
VCE = 15V IE = 0mA — — 5 mA
VCE = 5V IC = 1A 10 — 200 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
f = 30 MHz VCC = 12.5 V ICQ = 25 mA 20 — — W
f = 30 MHz VCC = 12.5 V ICQ = 25 mA 15 18 — dB
P
Value
Min. Typ. Max.
IMD f = 30 MHz VCC = 12.5 V ICQ = 25 mA — — − 30 dB
C
OB
Note: PIN = 0.65 W
f = 1 MHz VCB = 12.5 V — 100 — pF
Unit
Unit
2/3
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