SGS Thomson Microelectronics SD1275-01 Datasheet
.160 MHz
.13.6 VOLTS
.COMMON EMITTER
.P
OUT
40 W MIN. WITH 9.0 dB GAIN
=
SD1275-01
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
.380 4LF L (M113)
epoxy sealed
ORDER CODE
SD1275-01
PIN CONNECTION
BRANDING
SD1275-1
DESCRIPTI ON
The SD1275-01 isa13.6 VClassCepitaxial silicon
NPN planar transistor designed primarily for VHF
communications. The SD1275-01 utilizes an emitter ballasted die geometry to withstand severe load
mismatch conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 8.0 A
Power Dissipation 70 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
June 1993
1/4
SD1275-01
ELECTRICAL SPECIF ICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
CEO
EBO
CBO
h
FE
IC= 15mA VBE= 0mA 36 — — V
IC= 50mA IB= 0mA 16 — — V
IE= 5mA IC= 0mA 4.0 — — V
VCB= 15V IE= 0mA — — 5 mA
VCE= 5V IC= 250mA 20 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
C
P
OB
f = 160 MHz PIN= 5.0 W VCE= 13.6 V 40 — — W
f = 160 MHz PIN= 5.0 W VCE= 13.6 V 9 — — dB
f = 1 MHz VCB= 15 V — 95 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER GAIN vs FREQUENCY POWER OUTPUT vs POWER INPUT
2/4
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