.160 MHz
.13.6 VOLTS
.COMMON EMITTER
.P
OUT
40 W MIN. WITH 9.0 dB GAIN
=
SD1275
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
.380 4L ST UD (M135)
epoxy sealed
ORDER CODE
SD1275
PIN CONNECTION
BRANDING
SD1275
DESCRIPT I ON
The SD1275 is a 13.6 V Class C epitaxial silicon
NPN planar transistor designed primarily for VHF
communications. The SD1275 utilizes an emitter
ballasted die geometry to withstand severe load
mismatch conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 8.0 A
Power Dissipation 70 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
June 1993
1/4
SD1275
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
CEO
EBO
CBO
h
FE
IC= 15m A VBE= 0mA 36 — — V
IC= 50mA IB= 0mA 16 — — V
IE= 5mA IC= 0mA 4.0 — — V
VCB= 15V IE= 0mA — — 5 mA
VCE= 5V IC= 250mA 20 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
C
P
OB
f = 160 MHz PIN= 5.0 W VCE= 13.6 V 40 — — W
f = 160 MHz PIN= 5.0 W VCE= 13.6 V 9 — — dB
f = 1 MHz VCB= 15 V — 95 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER GAIN vs FREQUENCY
POWER OUTPUT vs POWER INPUT
2/4
TYPICAL PERFORMAN CE (cont’ d )
SD1275
POWER OUTPUT vs SUPPLY VOLTAGE
(175 MHz)
POWER OUTPUT vs SUPPLY VOLTAGE
(160 MHz)
POWER OUTPUT vs SUPPLY VOLTAGE
(145 MHz)
IMPEDA NCE DATA
FREQ. ZIN(Ω)Z
160 MHz 1.0 + j 0.4 2.3 + j 0.1
PIN= 3.0 W
VCE= 12.5 V
CL
(Ω)
3/4
SD1275
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0135
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publicationsupersedesand replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany- HongKong - Italy - Japan - Korea - Malaysia -Malta -Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
4/4
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