SGS Thomson Microelectronics SD1275 Datasheet
.160 MHz
.13.6 VOLTS
.COMMON EMITTER
.P
OUT
40 W MIN. WITH 9.0 dB GAIN
=
SD1275
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
.380 4L ST UD (M135)
epoxy sealed
ORDER CODE
SD1275
PIN CONNECTION
BRANDING
SD1275
DESCRIPT I ON
The SD1275 is a 13.6 V Class C epitaxial silicon
NPN planar transistor designed primarily for VHF
communications. The SD1275 utilizes an emitter
ballasted die geometry to withstand severe load
mismatch conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 8.0 A
Power Dissipation 70 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
June 1993
1/4
SD1275
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
CEO
EBO
CBO
h
FE
IC= 15m A VBE= 0mA 36 — — V
IC= 50mA IB= 0mA 16 — — V
IE= 5mA IC= 0mA 4.0 — — V
VCB= 15V IE= 0mA — — 5 mA
VCE= 5V IC= 250mA 20 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
C
P
OB
f = 160 MHz PIN= 5.0 W VCE= 13.6 V 40 — — W
f = 160 MHz PIN= 5.0 W VCE= 13.6 V 9 — — dB
f = 1 MHz VCB= 15 V — 95 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER GAIN vs FREQUENCY
POWER OUTPUT vs POWER INPUT
2/4
Loading...