SGS Thomson Microelectronics SD1224-10 Datasheet
.30 MHz
.28 VOLTS
.IMD −28 dB
.COMMON EMITTER
.GOLD METALLIZATION
.P
= 30 W MIN . WITH 18 dB GAIN
OUT
SD1224-10
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.380 4LFL (M113)
epoxy sealed
ORDER CO DE
SD1224-10
PIN CONNECTION
BRANDING
1224-10
DESCRIPTION
The SD1224-10 is a 28 V epitaxial silicon NPN
planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting
for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 4.5 A
Power Dissipation 80 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 2.2 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
October 1992
1/3
SD1224-10
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CBO
h
FE
= 200mA IE = 0mA 65 — — V
= 200mA VBE = 0V 65 — — V
= 200mA IB = 0mA 35 — — V
= 10mA IC = 0mA 4.0 — — V
VCB = 30V IE = 0mA — — 1 mA
VCE = 5V IC = .5A 5 — 200 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
f = 30 MHz VCE = 28 V ICQ = 25 mA 30 — — W
f = 30 MHz VCE = 28 V ICQ = 25 mA 18 20 — dB
P
Value
Min. Typ. Max.
IMD f = 30 MHz VCE = 28 V ICQ = 25 mA — − 32 − 28 dB
C
OB
Note: PIN = 0.48W
f = 1 MHz VCB = 30 V — — 65 pF
Unit
Unit
2/3
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