SGS Thomson Microelectronics SD1135-03 Datasheet

.150 MHz

.7.5 VOLTS

.COMMON EMITTER

.P

= 2.5 W MIN. WITH 11.0 dB GAIN

OUT

SD1135-03

RF & MICROWAVE TRANSISTORS

VHF PORTABLE/MOBILE APPLICATIONS

.280 4LSL (M123)

epoxy sealed

ORDER CO DE

SD1135-03

PIN CONNECTION

BRANDING

1135-3

DESCRIPTION

The SD1 135-03 is a 7.5 V C lass C epit axial silicon
NPN planar transistor designed primarily for VHF
communications. It withstands severe mismatch
under operating conditions.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

CBO

V

CER

V

CES

V

EBO

I

C

P

DISS

T

J

T

STG

THERMAL DATA

R

TH(j-c)

October 1992

Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 1.7 A
Power Dissipation 15 W
Junction Temperature +200
Storage Temperature

Junction-Case Thermal Resistance 11.6 °C/W

case

= 25°C)

1. Collector 3. Base

2. Emitter 4. Emitter

65 to +150

−

°

C

°

C

1/3

SD1135-03

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol Test Condition s

BV

CESIC

BV

CEOIC

BV

EBOIE

I

CER

I

CBO

h

FE

= 10m A VBE = 0V 36 — — V
= 50mA IB = 0mA 16 — — V

= 2mA IC = 0mA 4.0 — — V
VCE = 10V RBE = 50Ω ——0.5mA
VCB = 15V IE = 0mA — — 1.0 mA
VCE = 5V IC = 200mA 20 — — —

DYNAMIC

Symbol Test Conditions

P

OUT

G

C

OB

f = 150 MHz VCC = 7.5 V 2.5 — — W
f = 150 MHz VCC = 7.5 V 11.0 — — dB

P

f = 1 MHz VCB = 7.5 V — 19 — pF

Valu e

Min. Typ. Max.

Value

Min. Typ. Max.

Unit

Unit

IMPEDANCE DATA

TYPICAL INPUT

IMPEDANCE

Z

IN

TYPICAL COLLECTOR

LOAD IMPEDANCE

FREQ. ZIN (Ω)Z

CL

(Ω)
150 MHz 2.2 − j 0.4 7.9 + j 8.4
160 MHz 1.9 − j 0.8 7.6 + j 8.2
170 MHz 1.0 − j 1.0 6.0 + j 8.3

Z

CL

P
V

OUT
CE

= 2.5W

= 7.5V

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