SGS Thomson Microelectronics SD1135 Datasheet
.470 MHz
.12.5 VOLTS
.EFFICIENCY 60%
.COMMON EMITTER
.P
OUT
5.0 W MIN. WITH 8.5 dB GAIN
=
SD1135
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLI CATION S
.280 2L ST UD (M122)
epoxy sealed
ORDER CODE
SD1135
PIN CONNECTION
BRANDING
SD1135
DESC RIPT ION
The SD1135 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for UHF
communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CER
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 18 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 2.0 A
Power Dissipation 37 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 11.6 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
October 1992
1/4
SD1135
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
CEO
EBO
CBO
h
FE
IC= 10m A VBE= 0mA 36 — — V
IC= 50mA IB= 0mA 16 — — V
IE= 2mA IC= 0mA 4.0 — — V
VCB= 15V IE= 0mA — — 1 mA
VCE= 5V IC= 200mA 20 — — —
DYNAMIC
Symbol Test Conditions
P
OUT
G
C
P
OB
f = 470 MHz PIN= 0.70 W VCC= 12.5 V 5.0 — — W
f = 470 MHz PIN= 0.70 W VCC= 12.5 V 8.5 — — dB
f = 1 MHz VCB= 12 V — 19 — pF
TYPICA L PERFO R MA NCE
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY
CAPACITANCE vs VOLTAGE
2/4
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