.175 MHz
.7.5 VOLTS
.COMMON EMITTER
.P
= 0.5 W MIN. WITH 7.0 dB GAIN
OUT
SD1134-05
RF & MICROWAVE TRANSISTORS
VHF PORTABLE/MOBILE APPLICATIONS
.280 4LSL (M123)
epoxy sealed
ORDER CO DE
SD1134-05
PIN CONNECTION
BRANDING
1134-5
DESCRIPTION
The SD1134-05 is a 7.5 V epitaxial silicon NPN
planar transistor designed primarily for VHF communications. It with stands very high VSWR under
rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CER
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
October 1992
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 0.75 A
Power Dissipation 5.0 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 35 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
1/3
SD1134-05
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CER
I
CBO
h
FE
= 5m A VBE = 0V 36 — — V
= 25mA IB = 0mA 16 — — V
= 1mA IC = 0mA 4.0 — — V
VCE = 10V RBE = 80Ω ——0.5mA
VCB = 15V IE = 0mA — — 1.0 mA
VCE = 5V IC = 100mA 40 — 200 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
C
OB
f = 150 MHz VCC = 7.5 V 1.4 — — W
f = 150 MHz VCC = 7.5 V 11.5 — — dB
P
f = 1 MHz VCB = 7.5 V — 6.0 — pF
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/3