SGS Thomson Microelectronics SD1134 Datasheet
.450 - 512 MHz
.12.5 VOLTS
.EFFICIENCY 55%
.COMMON EMITTER
.P
OUT
2.0 W MIN. WITH 10.0 dB GAIN
=
SD1134
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLI CATION S
.280 4L ST UD (M122)
epoxy sealed
ORDER CODE
SD1134
PIN CONNECTION
BRANDING
SD1134
DESCRIPT I ON
The SD1134 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for UHF
communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 0.75 A
Power Dissipation 5 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 35 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/4
SD1134
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CBO
h
FE
= 5mA VBE= 0V 36 — — V
= 25mA IB= 0mA 16 — — V
= 1mA IC= 0mA 4.0 — — V
VCB= 15V IE= 0mA — — 1 mA
VCE= 5V IC= 100mA 20 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
C
OB
f = 470 MHz PIN= 0.20 W VCC= 12.5 V 2.0 — — W
f = 470 MHz PIN= 0.20 W VCC= 12.5 V 10.0 — — dB
P
f = 1 MHz VCB= 12 V — 6 — pF
TYPICA L PERFO R MA NCE
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
POWER OUTPU T & COL LECTO R
EFFICI ENCY vs POWER INPUT
CAPACITANCE vs VOLTAGE
POWER OUTPUT vs FREQUENCY
2/4
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