SGS Thomson Microelectronics S2514BH, S2514DH, S2514MH, S2514NH, S2516BH Datasheet

FEATURES



S25xxxH

SCR

I
V

=25A

T(RMS)

= 200Vto 800V

DRM

High surge currentcapability

K

A

G

DESCRIPTION

The S25xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.

TO220

non-insulated

(Plastic)

ABSOLUTERATINGS (limitingvalues)

Symbol Parameter Value Unit

I

T(RMS)

RMSon-state current

Tc=85°C25 A

(180° conductionangle)

I

T(AV)

Averageon-state current

Tc=85°C16 A

(180° conductionangle)

I

TSM

Non repetitivesurge peakon-statecurrent
(T

initial= 25°C)

j

tp = 8.3 ms 270 A

tp = 10 ms 250

2

I

t

2

I

t Value for fusing

tp = 10 ms 310 A

2

s

dI/dt

T

stg

T

j

Tl

Criticalrate of rise of on-state current

I

= 100 mA diG/dt = 1 A/µs.

G

Storageand operatingjunctiontemperature range

Maximumleadtemperaturefor soldering during 10sat

4.5mm from case

Symbol Parameter

V

DRM

V

RRM

January 1995

Repetitivepeak off-statevoltage

=125°C

T

j

100 A/µs

- 40, + 150

°C

- 40, + 125
260 °C

Voltage

Unit

BDMN

200 400 600 800 V

1/5

S25xxxH

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junctionto ambient 60 °C/W
Rth(j-c) Junction to casefor DC 1.6 °C/W

GATE CHARACTERISTICS (maximumvalues)
P

=1W PGM=10 W(tp =20 µs) IGM=4A(tp=20µs)

G (AV)

ELECTRICALCHARACTERISTICS

Symbol Test Conditions

I

GT

V

GT

V

GD

tgt V

I

H

I

L

V

TM

I

DRM

I

RRM

dV/dt V

tq

VD=12V (DC) RL=33Ω Tj= 25°C MIN 30 20 mA

VD=12V (DC) RL=33Ω Tj= 25°C MAX 1.5 V
VD=V

DRMRL

D=VDRMITM

dI

/dt = 1.5A/µsIG= 200mA

G

=3.3kΩ Tj= 125°C MIN 0.2 V

=3xI

IT= 500mA Gate open Tj= 25°C MAX 115 100 mA
IG=1.2 I

GT

ITM= 50A tp= 380µs Tj= 25°C MAX 1.6 V
VD=V

DRM

VR=V

RRM

=67%V

D

I

TM

=3xI

Gateopen Tj= 110°C MIN 750 500 V/µs

DRM

)VR=35V

T(AV

dI/dt=25A/µs tp=100µs
dV/dt=25V/µs
V

= 67%V

D

DRM

T(AV

Sensitivity Unit

14 16

MAX 75 50

)

Tj= 25°C TYP 2 µs

Tj= 25°C MAX 230 200 mA

Tj= 25°C MAX 10 µA

Tj= 110°C MAX 2.5 mA

Tj= 110°C MAX 100 µs

ORDERINGINFORMATION

SCR MESA GLASS

CURRENT

2/5

S2516MH

PACKAGE:
H =TO220 Non-insulated

SENSITIVITY



VOLTAGE

S25xxxH

Fig.1 : Maximum average power dissipation ver-

sus averageon-statecurrent.

P (W)

25

20

15

10

5

0

02468101214161820

360

O

DC

o

=180

o

=120

o

=90

o

=60

o

=30

I (A)

T(AV)

Fig.3 : Averageon-state currentversus case tem-

perature.

I (A)

T(AV)

30

25

20

DC

Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem­perature (Tamb and Tcase) for different thermal
resistancesheatsink+ contact.

o
o

1C/W

o

2C/W

o

4C/W

o

-80

-90

-100

-110

-120

P (W) Tcase ( C)

25 -70

Rth = 0 C/W

20

15

o

= 180

10

5

o

Tamb ( C)

0

0 20 40 60 80 100 120 140

Fig.4 : Relative variation of thermal impedance

versuspulse duration.

Zth/Rth

1

Zth( j-c)

15

= 180

o

10

5

0

0 102030405060708090100110120130

o

Tcase ( C)

Fig.5: Relativevariationof gatetriggercurrentand

holding current versusjunction temperature.

Igt[Tj]
Igt[Tj=25 C]

2.6

2.4

2.2

2.0

1.8

1.6

1.4
Ih

1.2

1.0

0.8

0.6

0.4

-40 -20 0 20 40 60 80 100 120 140

o

Igt

Tj( C)

Ih[Tj]
Ih[Tj=25 C]

o

o

0.1

0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Zth( j-a)

tp(s )

Fig.6 : Non repetitive surge peak on-state current

versusnumber of cycles.

I (A)

TSM

300

Tj initial = 25 C

250

200

150

100

50

Number of cycles

0

1 10 100 1000

o

3/5



S25xxxH

Fig.7 : Non repetitive surge peak on-state current

for a sinusoidal pulse with width : tp ≤ 10ms, and
correspondingvalue ofI

I (A). I2t(A2s)

TSM

1000

2

I

TSM

t.

Tj initial = 25 C

o

Fig.8: On-statecharacteristics(maximumvalues).

I (A)

TM

1000

Tj initial

o

25 C

100

I2t

10

tp(ms)

100

110

1

0 0.5 1 1.5 2 2.5 3 3.5 4

Tj max

Tj max
Vto =0.95V
Rt = 0 . 012

V (V)

TM

4/5



PACKAGEMECHANICAL DATA

TO220 Non-insulated(Plastic)

A

G

I

B

C

O
P

F

D

N1

N

S25xxxH

DIMENSIONS

REF.

A 10.3 0.406

H

J

B 6.3 6.5 0.248 0.256
C 9.1 0.358
D 12.7 0.500
F 4.2 0.165

G 3.0 0.118

L

H 4.5 4.7 0.177 0.185

I 3.53 3.66 0.139 0.144

J 1.2 1.3 0.047 0.051

M

L 0.9 0.035

M 2.7 0.106

N 5.3 0.209

N1 2.54 0.100

O 1.2 1.4 0.047 0.055

P 1.15 0.045

Millimeters Inches

Typ. Min. Max. Typ. Min. Max.

Marking: type number
Weight: 1.8 g

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare not authorized foruse as critical components in life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.

 1995SGS-THOMSON Microelectronics - All rights reserved.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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5/5

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