SGS Thomson Microelectronics S2514BH, S2514DH, S2514MH, S2514NH, S2516BH Datasheet
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FEATURES
S25xxxH
SCR
I
V
=25A
T(RMS)
= 200Vto 800V
DRM
High surge currentcapability
K
A
G
DESCRIPTION
The S25xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.
TO220
non-insulated
(Plastic)
ABSOLUTERATINGS (limitingvalues)
Symbol Parameter Value Unit
I
T(RMS)
RMSon-state current
Tc=85°C25 A
(180° conductionangle)
I
T(AV)
Averageon-state current
Tc=85°C16 A
(180° conductionangle)
I
TSM
Non repetitivesurge peakon-statecurrent
(T
initial= 25°C)
j
tp = 8.3 ms 270 A
tp = 10 ms 250
2
I
t
2
I
t Value for fusing
tp = 10 ms 310 A
2
s
dI/dt
T
stg
T
j
Tl
Criticalrate of rise of on-state current
I
= 100 mA diG/dt = 1 A/µs.
G
Storageand operatingjunctiontemperature range
Maximumleadtemperaturefor soldering during 10sat
4.5mm from case
Symbol Parameter
V
DRM
V
RRM
January 1995
Repetitivepeak off-statevoltage
=125°C
T
j
100 A/µs
- 40, + 150
°C
- 40, + 125
260 °C
Voltage
Unit
BDMN
200 400 600 800 V
1/5
S25xxxH
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 60 °C/W
Rth(j-c) Junction to casefor DC 1.6 °C/W
GATE CHARACTERISTICS (maximumvalues)
P
=1W PGM=10 W(tp =20 µs) IGM=4A(tp=20µs)
G (AV)
ELECTRICALCHARACTERISTICS
Symbol Test Conditions
I
GT
V
GT
V
GD
tgt V
I
H
I
L
V
TM
I
DRM
I
RRM
dV/dt V
tq
VD=12V (DC) RL=33Ω Tj= 25°C MIN 30 20 mA
VD=12V (DC) RL=33Ω Tj= 25°C MAX 1.5 V
VD=V
DRMRL
D=VDRMITM
dI
/dt = 1.5A/µsIG= 200mA
G
=3.3kΩ Tj= 125°C MIN 0.2 V
=3xI
IT= 500mA Gate open Tj= 25°C MAX 115 100 mA
IG=1.2 I
GT
ITM= 50A tp= 380µs Tj= 25°C MAX 1.6 V
VD=V
DRM
VR=V
RRM
=67%V
D
I
TM
=3xI
Gateopen Tj= 110°C MIN 750 500 V/µs
DRM
)VR=35V
T(AV
dI/dt=25A/µs tp=100µs
dV/dt=25V/µs
V
= 67%V
D
DRM
T(AV
Sensitivity Unit
14 16
MAX 75 50
)
Tj= 25°C TYP 2 µs
Tj= 25°C MAX 230 200 mA
Tj= 25°C MAX 10 µA
Tj= 110°C MAX 2.5 mA
Tj= 110°C MAX 100 µs
ORDERINGINFORMATION
SCR MESA GLASS
CURRENT
2/5
S2516MH
PACKAGE:
H =TO220 Non-insulated
SENSITIVITY
VOLTAGE
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