SGS Thomson Microelectronics S2000AFI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISED ISOWATT218PACKAGE
(U.L. FILE # E81734(N).
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV
DESCRIPTION
The S2000AFI is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
S2000AFI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
P
T
Collector-Emitter V oltage (VBE=0) 1500 V
CES
Collector-Emitter V oltage (IB= 0) 700 V
CEO
Emitter-Base Voltage (IC=0) 10 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 15 A
CM
Total Dis sipation at Tc=25oC50W
tot
Stora ge Temperat u re -65 to 15 0
stg
Max. O perati ng J unct ion T emperatu re 150
T
j
o
C
o
C
December 1999
1/6
S2000AFI
THERMAL DATA
R
thj-case
Ther mal Resistance J u nc tion-cas e Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
BE
=0)
Emit ter Cut-o f f Curr ent
=0)
(I
C
∗ Co llector-Emitter
V
=1500V TC=125oC
CE
=1500V
V
CE
V
=5V 100 µA
EB
I
= 100 mA 700 V
C
1
2
Sust aining Voltage
=0)
(I
B
V
V
CE(sat)
EBO
Emit ter Base Vo ltage
=0)
(I
C
∗ Collector-Emitter
I
=10mA 10 V
E
IC=4.5A IB=2A 1 V
Saturation Voltage
V
BE(sat)
∗ Base-Emitt er
IC=4.5A IB=2A 1.3 V
Saturation Voltage
INDUCTIV E LOAD
t
f
∗
Pulsed: Pulse duration =300 µs, duty cycle1.5 %
St orage Time
s
t
Fall Time
f
Tr ansition Frequency IC=0.1A VCE=5V f=5MHz 7 MHz
T
IC=4.5A hFE=2.5 VCC=140V
=0.9mH LB=3µH
L
C
7
0.55
mA
mA
µs
µs
Safe OperatingArea. ThermalImpedance
2/6
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