SGS Thomson Microelectronics RBO40-40G, RBO40-40M, RBO40-40T Datasheet

RBO40-40G/M/T
ApplicationSpecific Discretes
A.S.D.
FEATURES
PROTECTIONAGAINST”LOADDUMP”PULSE 40A DIODE TO GUARD AGAINST BATTERY
REVERSAL MONOLITHIC STRUCTURE FOR GREATER
RELIABILITY BREAKDOWNVOLTAGE: 24V min. CLAMPINGVOLTAGE: ± 40V max. COMPLIANTWITHISO /DTR 7637
DESCRIPTION
Designedto protectagainst batteryreversaland loaddumpovervoltagesin automotiveapplica­tions,thismonolithiccomponentoffersmultiple functionsin thesamepackage: D1 : reversedbatteryprotection T1 : clampingagainst negativeovervoltages T2 : Transilfunctionagainst ”loaddump” effect.
TM
OVERVOL TAGEPROTECTIO NCIRCUIT(R BO)
REVERSEDBATTERYAND
D2PAK
RBO40-40G
PowerSO-10
RBO40-40M
TM
January1997 -Ed :3
TO220AB
RBO40-40T
FUNCTIONAL DIAGRAM
1
3
2
1/15
RBO40-40G / RBO40-40M / RBO40-40T
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
FSM
Non repetitivesurgepeak forward current
tp = 10ms 120 A
(DiodeD1)
I
F
V
PP
DC forwardcurrent (Diode D1) Tc = 75°C40 A Peakload dump voltage (seenote 1and2)
80 V
5 pulses(1 minute between each pulse)
P
PP
Peakpulse power betweenInput andOutput
10/1000µs 1500 W
(TransilT1) Tj initial= 25°C
T
stg
Tj
T
L
Storagetemperature range Maximumjunction temperature
Maximumlead temperatureforsolderingduring 10 s
- 40 to + 150 150
260 °C
at 4.5mm from casefor TO220AB
Note 1 :for a surge greater than the maximum value, the device will fail in short-circuit. Note 2 : see Load Dump curves.
TM : PowerSO-10,TRANSIL and ASD are trademarks of SGS-THOMSON Microelectronics.
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-c)
Junctionto case
RBO40-40M
RBO40-40G
RBO40-40T
1.0
1.0
1.0
°C
°C/W
Rth (j-a) Junctionto ambient RBO40-40T 60 °C/W
D1
I13
31
F
I
T1
V
31 VRM31
CL
Ex: VF13 . betweenPin 1andPin3 VBR32. between Pin 3 and Pin 2
T2
2
V
31
BR
V
IRM31
31
I
R
Ipp31
F13
V13
Ipp32
I
RM
I32
IR32
32
VRM32 V
32 V
R
B
1
V32
32
C
L
3
2
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RBO40-40G / RBO40-40M / RBO40-40T
Symbol Parameter
V
RM31/VRM32
V
BR31/VBR32
I
R31/IR32
V
CL31/VCL32
V
F13
I
PP
αT Temperaturecoefficientof V
C
31/C32
C
13
Stand-offvoltage Transil T1/ Transil T2. Breakdownvoltage Transil T1 / TransilT2. LeakagecurrentTransilT1 /TransilT2. ClampingvoltageTransilT1 /TransilT2. Forwardvoltagedrop DiodeD1. Peak pulse current.
.
BR
CapacitanceTransil T1/ TransilT2. Capacitanceof DiodeD1
ELECTRICAL CHARACTERISTICS: DIODED1 (-40°C< T
amb
Symbol Test Conditions
V V V V
C
F13 F13 F13 F13
13
IF= 40A 1.9 V IF= 20A 1.45 V IF=1A 1 V IF= 100mA F = 1MHz VR=0V
ELECTRICAL CHARACTERISTICS: TRANSILT1 (- 40°C<T
Symbol Test Conditions
V
BR 31
V
BR 31
I
RM 31
I
RM 31
V
CL 31
αT Temperaturecoefficient of V
C
31
IR=1 mA 22 35 V IR=1 mA,T
=25°C2432V
amb
VRM=20 V 100 µA VRM=20V,T
amb
=25°C
IPP=37.5A,Tjinitial= 25° C 10/1000µs40V
BR
F = 1MHz VR= 0 V 3000 pF
<+85°C)
<+85°C)
amb
Value
Min. Typ. Max.
0.95 V
3000 pF
Value
Min. Typ. Max.
10 µA
910-4/°C
Unit
Unit
ELECTRICAL CHARACTERISTICS : TRANSILT2 (- 40°C<T
Symbol Test Conditions
V
BR 32
V
BR 32
I
RM 32
I
RM 32
V
CL 32
α T Temperaturecoefficientof V C
32
Note 1 : One pulse,see pulse definition in load dump testgenerator circuit.
IR=1 mA 22 35 V IR=1 mA,T
=25°C2432V
amb
VRM=20 V 100 µA VRM=20V,T
amb
=25°C
IPP= 20 A (note1) 40 V
BR
F = 1MHz VR=0 V 8000 pF
amb
<+85°C)
Value
Min. Typ. Max.
Unit
10 µA
910-4/°C
3/15
RBO40-40G / RBO40-40M / RBO40-40T
PRODUCTDESCRIPTION
1
2
BASICAPPLICATION
TheRBO has 3functionsintegratedonthe same chip.
3
D1 : “Diode function” in order to protect against reversedbattery operation.
T2: “Transil function” in order to protectagainst positive surge generated by electric systems
(ignition,relay. ...).
T1: Protectionformotor drive application (Seebelow).
* The monolithic multi-function protection (RBO) has been developed to protect sensitivesemiconductorsin car electron ic modules against both overvoltage and batteryreverse.
* In addition, the RBO circuit prevents overvoltages generated by the module from affecting the carsupply network.
MOTORDRIVER APPLICATION
BATTERY
Filter
D1
T2
T1
MOTOR
RBO
DEVIC E MOTO R C ONTROL
In thisapplication,onehalfof the motordrivecircuitis suppliedthroughthe “RBO” and isthusprotected as perits basicfunctionapplication. The secondpart isconnecteddirectly to the“carsupplynetwork” and is protectedas follows:
- Forpositivesurges: T2(clampingphase)and D1in forward-biased.
- Fornegativesurges: T1(clampingphase) andT2 inforward-biased.
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2
PINOUTconfigurationin D
PAK:
-Input (1) : Pin1
-Output (3) : Pin3
-Gnd (2) : Connectedto base Tab
Marking : Logo,datecode, RBO40-40G
PINOUTconfigurationin PowerSO-10:
-Input (1) : Pin1 to 5
-Output (3) : Pin6 to10
-Gnd (2) : Connectedto base Tab
Marking : Logo,datecode, RBO40-40M
RBO40-40G / RBO40-40M / RBO40-40T
D1
T2
T1
TAB
Pin 1
D1
Input (1)
Output (3)
T2
T1
Gnd (2)
Tab
Pin 6
PINOUTconfigurationin TO220AB:
-Input (1) : Pin1
-Output (3) : Pin3
-GND (2) : Connectedto baseTab
Marking : Logo,datecode, RBO40-40T
TOP VIEW
D1
T2
T1
(TAB)
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