SGS Thomson Microelectronics PLQ1, PLQ08 Datasheet
FAST RECOVERY RECTIFIER DIODES
VERY FAST FORWARD AND REVERSE
RECOVERY DIODES
SUITABLE APPLICATION
SWTCHING POWER TRANSISTORS DRIVER
CIRCUITS (SERIES DIODES IN
ANTISATURATION CLAM P SP EED U P D IODE
IN DISCRETE DARLINGTON...)
THYRISTORS GATE DRIVER CIRCUITS
HIGH FREQUENCY RECTIFICATION
PLQ 08
PLQ 1
F 126
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
FRM
I
F (AV)
I
FSM
P
tot
T
stg
T
T
L
Symbol Parameter PLQ 08 PLQ 1 Unit
V
RRM
V
RSM
Repetive Peak Forward Current
Average Forward Current* Ta = 25°C
Surge non Repetitive Forward Current tp = 10ms
Power Dissipation*
Storage and Junction Temperature Range - 40 to 125
j
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
Repetitive Peak Reverse Voltage 80 100 V
Non Repetitive Peak Reverse Voltage 80 100 V
≤ 20µs
t
p
δ = 0.5
Sinusoidal
Ta = 25°C
20 A
1A
20 A
1.7 W
230
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j - a)
Junction-ambient* 60
°C
°C
°C/W
* On infinite heatsink with 10mm lead length.
November 1994
1/5
PLQ 08/PLQ 1
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol Test Conditions Min. Typ. Max. Unit
I
R
V
F
Tj = 25°C
= 100°C
T
j
Tj = 25°C
V
R
= V
RRM
10
0.5 mA
I
= 1A 1.1 V
F
RECOVERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
t
fr
Tj = 25°C IF = 1A diF/dt = - 50A/µs
= 30V See figure 12
V
R
Tj = 25°C IF = 1A
Measured at 1.1 x V
F
tr = 20ns
50 ns
50 ns
µA
2/5
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