SGS Thomson Microelectronics PD55003L Datasheet
PD55003L
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 3 W with 17 dB gain @ 500 MHz / 12.5 V
OUT
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The PD55003L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high ga in, broadb and
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003L boasts the excellent gain,
linearity and reliability of STH1LV latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
PD55003L’s superior linearity performance makes
it an ideal solution for car mobile radio.
The LdmoST
PowerFLAT
ORDER CODE
PD55003L
PIN CONNECTION
Plastic FAMILY
™(5x5)
BRANDING
55003
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
(BR)DSS
V
GS
I
D
P
DISS
Tj Max. Operating Junction Temperature 150 °C
T
STG
Drain-Source Voltage 40 V
Gate-Source Voltage -0.5 to +15 V
Drain Current 2.5 A
Power Dissipation (@ Tc = 70°C) 14 W
Storage Temperature -65 to +150 °C
CASE
= 25 °C)
THERMA L D ATA
R
th(j-c)
Junction -Case Thermal Resistance 5.7 °C/W
1/13June, 17 2003
PD55003L
ELECTRICAL SPECIFICATION (T
CASE
= 25 °C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
C
C
C
FS
ISS
OSS
RSS
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 10 V
= 50 mA
ID
VGS = 10 V ID = 0.5 A
VDS = 10 V ID = 1 A
VGS = 0 V VDS = 12.5 V f = 1 MHz
VGS = 0 V VDS = 12.5 V f = 1 MHz
VGS = 0 V VDS = 12.5 V f = 1 MHz
1 µA
1 µA
2.0 5.0 V
0.36 V
1.0 mho
34 pF
23 pF
1.8 pF
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
P
1dB
G
P
η
D
Load
mismatch
VDD = 12.5 V IDQ = 50 mA f = 500 MHz
V
= 12.5 V IDQ = 50 mA P
DD
VDD = 12.5 V IDQ = 50 mA P
= 15.5 V IDQ = 50 mA P
V
DD
= 3 W f = 500 MHz
OUT
= 3 W f = 500 MHz
OUT
= 3 W f = 500 MHz
OUT
ALL PHASE ANGLES
3W
17 19 dB
50 52 %
20:1 VSWR
D
Z
DL
Typical Input
Impedance
G
Zin
Typical Drain
Load Impedance
IMPEDANCE DATA
Z
FREQ. MHz
480 1.79 - j 4.96 10.68 + j 7.45
(Ω)Z
IN
500 1.88 - j 5.93 10.28 + j 8.92
S
SC13140
520 2.10 - j 7.03 9.86 + j 10.18
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2
Machine Model M3
MOISTURE SENS IT I VITY LEVEL
Test Methodology Rating
J-STD-020B MSL 3
DL
(Ω)
2/13
TYPICAL PERFORMANCE
Capacitance Vs Supply Voltage
PD55003L
Output Power Vs Input Power
1000
100
Ciss
C (pF)
Coss
10
Crss
1
0246810121416
Vds ( V)
f = 1 M Hz
Power Gain Vs Output Power
24
22
20
18
Gp (dB)
16
14
Idq = 50 mA
Idq = 20 mA
Idq = 70mA
Idq = 30 mA
6
5
4
3
Pout (W)
2
1
0
0 25 50 75 100 125
Idq = 70 mA
Pin (mW)
Idq = 50 mA
Vds = 12.5 V
f = 500 MHz
Efficiency Vs Outpu t Po we r
70
60
50
40
Nd (%)
30
20
Idq = 50 mA
Idq = 70 mA
12
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Pout (W)
Vds = 12.5 V
f = 500 MHz
Input Return Loss Vs Output Power
0
-5
-10
Idq = 50 mA
-15
RL (dB)
-20
-25
-30
Idq = 70 mA
Vds = 12.5 V
f = 500 MHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Pout (W)
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Pout (W)
Vds = 12.5 V
f = 500 MHz
Output Power Vs Bias Current
7
6
5
4
Pout (W)
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
Idq (m A)
Pin = 20 dBm
f = 500 MHz
Vdd = 12.5 V
3/13
PD55003L
TYPICAL PERFORMANCE
Efficiency Vs Bias Current
Output Power Vs Supply Voltage
80
70
60
50
40
Nd (%)
30
20
10
0
0 50 100 150 200 250 300 350 400 450 500
Idq (mA)
Pin = 20 dBm
f = 500 MHz
Vdd = 12.5 V
Output Power Vs Gate-Source Voltage
7
6
5
4
8
7
6
5
4
Pout (W)
3
2
1
0
5 6 7 8 9 101112131415
Vds (V)
Idq = 50 mA
Pin = 20 dBm
f = 500 MHz
Pout (W)
3
2
1
0
0.0 0.5 1.0 1 .5 2.0 2.5 3.0 3.5 4.0
Vgs (V)
Pin = 20 dBm
Vdd = 12.5 V
f = 500 MHz
4/13
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