SGS Thomson Microelectronics MTP3055E Datasheet
MTP3055E
N - CHANNEL 60V - 0.1Ω - 12A TO-220
STripFET MOSFET
TYPE V
DSS
R
DS(on)
I
D
MT P3055E 60 V < 0.15 Ω 12 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100%AVALANCHETESTED
o
■ 175
■ APPLICATIONORIENTED
C OPERATINGTEMPERATURE
DS(on)
= 0.1 Ω
CHARACTERIZATION
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ REGULATORS
■ DC-DC& DC-ACCONVERTERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
DM
P
T
(•) Pulse widthlimited by safeoperating area
First digit of the datecode being Zor K identifies silicon characterized in this datasheet.
July 1999
Dra in- sour c e Voltage ( VGS=0) 60 V
DS
Dra in- gate V ol t age (RGS=20kΩ)60V
DGR
Gat e-source Voltage
GS
I
Dra in Current (contin uous) at Tc=25oC12A
D
Dra in Current (pulsed) at Tc= 100oC9A
DM
20 V
±
(•) Dra in Current (pulsed) 48 A
Tot al Dissipation at Tc=25oC40W
tot
St orage Tem pe r at ur e -65 to 175
stg
T
Max. Operat ing Junc tion Tem perature 175
j
o
C
o
C
1/8
MTP3055E
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-s
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead T emperat ure For Solder ing Purp os e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A v alan che Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
3.75
62.5
0.5
300
12 A
50 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRatingx0.8 Tc=125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA22.94V
Sta t ic Drain-sour c e On
VGS=10V ID=7A 0.1 0.15
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )maxVGS
=10V 12 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitanc e
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=6A 4 6 S
VDS=25V f=1MHz VGS= 0 760
100
30
µ
µA
Ω
pF
pF
pF
A
2/8
MTP3055E
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Q
Q
Q
t
Turn-on Time
Rise T ime
r
Tur n-of f Delay Time
t
Fall T ime
f
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=30V ID=7A
R
G
=50
Ω
VGS=10V
(see t est circuit)
ID=12A VGS=10V
=40V
V
DD
(see t est circuit)
20
65
70
35
15
7
5
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
Source-drain Current
(•)
(pulsed)
12
48
(∗)ForwardOnVoltage ISD=12A VGS=0 2.0 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 12 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
65
0.17
Charge
ns
ns
ns
ns
nC
nC
nC
A
A
ns
µ
C
SafeOperating Area ThermalImpedance
3/8
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