SGS Thomson Microelectronics MTP3055E Datasheet



MTP3055E

N - CHANNEL 60V - 0.1Ω - 12A TO-220

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

MT P3055E 60 V < 0.15 Ω 12 A

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100%AVALANCHETESTED

o

■ 175

■ APPLICATIONORIENTED

C OPERATINGTEMPERATURE

DS(on)

= 0.1 Ω

CHARACTERIZATION

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ REGULATORS

■ DC-DC& DC-ACCONVERTERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

DM

P

T

(•) Pulse widthlimited by safeoperating area First digit of the datecode being Zor K identifies silicon characterized in this datasheet.

July 1999

Dra in- sour c e Voltage ( VGS=0) 60 V

DS

Dra in- gate V ol t age (RGS=20kΩ)60V

DGR

Gat e-source Voltage

GS

I

Dra in Current (contin uous) at Tc=25oC12A

D

Dra in Current (pulsed) at Tc= 100oC9A

DM

20 V

±

(•) Dra in Current (pulsed) 48 A

Tot al Dissipation at Tc=25oC40W

tot

St orage Tem pe r at ur e -65 to 175

stg

T

Max. Operat ing Junc tion Tem perature 175

j

o

C

o

C

1/8

MTP3055E

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-s

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambient Max Ther mal Resistanc e Case-sink Ty p Maximum L ead T emperat ure For Solder ing Purp os e

l

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

Single Pulse A v alan che Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

3.75

62.5

0.5

300

12 A

50 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Volt age

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gat e- bod y Leakage Current (V

DS

=0)

V

=MaxRating

DS

=MaxRatingx0.8 Tc=125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µA22.94V Sta t ic Drain-sour c e On

VGS=10V ID=7A 0.1 0.15

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on )maxVGS

=10V 12 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

Input Capacitanc e

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=6A 4 6 S

VDS=25V f=1MHz VGS= 0 760

100

30

µ µA

Ω

pF pF pF

A

2/8

MTP3055E

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING RESISTIVE LOAD

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Q Q Q

t

Turn-on Time Rise T ime

r

Tur n-of f Delay Time

t

Fall T ime

f

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=30V ID=7A R

G

=50

Ω

VGS=10V

(see t est circuit)

ID=12A VGS=10V

=40V

V

DD

(see t est circuit)

20 65 70 35

15

7 5

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5% (•) Pulse width limited by safeoperating area

Source-drain Current Source-drain Current

(•)

(pulsed)

12 48

(∗)ForwardOnVoltage ISD=12A VGS=0 2.0 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 12 A di/dt = 100 A/µs

=30V Tj= 150oC

V

DD

65

0.17

Charge

ns ns ns ns

nC nC nC

A A

ns

µ

C

SafeOperating Area ThermalImpedance

3/8