Datasheet MSS50-800, MSS40-1200, MSS40-800, MSS50-1200 Datasheet (SGS Thomson Microelectronics)
®
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
55 and 70 A
800 and 1200 V
50 mA
DESCRIPTION
Packaged in ISOTOP modules, the MSS40 /
MSS50 Series is based on two back-to-back SCR
configurations, providing high noise immunity.
They are suitable for high power applications such
as solid state relays, heating control systems,
welding equipment, motor control circuits...
The compactness of the ISOTO P package allows
high power density and optimized power bus
connections. Thanks to their internal ceramic pad,
they provide high voltage insulation (2500V
RMS),
complying with UL standards (File ref: E81734).
PIN CONNECTIONS
MSS40 / 50 Series
BACK TO BACK SCR MODULE
A2
G2
ISOTOP®
G1
A1
G1
1:Thyristor 2 Anode (A2)
2:Thyristor 2 Gate (G2)
3:Thyristor 1 Anode (A1)
4:Thyristor 1 Gate (G1)
4
1
3
A1 A2
2
G2
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
MSS40 MSS50
I
T(RMS)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
T
V
RGM
ISOTOP is a registre d trademark of STMicroelectronic s
September 2000 - Ed: 3
RMS on-state current Tc = 80 °C 55
Tc = 85 °C 70
Non repetitive surge peak on-state
current
tI
j
²
t Value for fusing
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage 5 V
tp = 16.7 ms
tp = 20 ms 400 600
tp = 10 ms Tj = 25°C 800 1800
F = 120 Hz Tj = 125°C 50 A/µs
Tj = 25°C
420 630
- 40 to + 150
- 40 to + 125
A
A
2
S
A
°C
1/5
MSS40 / 50 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions
I
GT
VD = 12 V RL = 33 Ω
V
GT
V
GD
I
H
I
L
dV/dt
VD = V
RL = 3.3 kΩ
DRM
IT = 500 mA Gate open
IG = 1.2 I
V
= 67 % V
D
GT
Gate open
DRM
ITM = 80 A tp = 380 µs
V
TM
V
R
I
DRM
I
RRM
t0
d
= 100 A tp = 380 µs
I
TM
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 11 7 mΩ
V
DRM
/ V
RRM
RATED
THERMAL RESISTANCES
Value
Unit
MSS40 MSS50
MIN. 5 mA
MAX. 50
MAX. 1.3 V
Tj = 125°C MIN. 0.2 V
MAX. 80 mA
MAX. 120 mA
Tj = 125°C MIN. 1000 V/µs
1.7 -
Tj = 25°C MAX.
V
- 1.7
Tj = 25°C MAX. 20 µA
Tj = 125°C 10 mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC) MSS40 0.6 °C/W
MSS50 0.45
PRODUCT SELECTOR
Part Number
MSS40-xxx X X 50 mA
MSS50-xxx X X 50 mA
Voltage (xxx)
800 V 1200 V
Sensitivity
Package
ISOTOP
ISOTOP
ORDERING INFORMATION
MSS 40 - 800
SCR
MODULE
SERIES
CURRENT:
40: 55A
50: 70A
VOLTAGE:
800: 800V
1200: 1200V
TM
TM
2/5
MSS40 / 50 Series
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing mode
MSS40-xxx MSS40-xxx 27.0 g 10 Tube
MSS50-xxx MSS50-xxx 27.0 g 10 Tube
Note: xxx = voltage
Fig. 1: Maximum power dissipation versus RMS
on-state current.
P(W)
100
α = 180°
90
80
70
60
50
40
30
20
10
0
0 1020304050607080
MSS40
IT(RMS)(A)
MSS50
α
180°
α
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
K = [Zth(j-c)/Rth(j-c)]
1.0
0.5
0.2
0.1
1E-3 1E-2 1E-1 1E+0 1E+1
tp(s)
Fig. 2: RMS on-state current versus case
temperature.
IT(RMS)(A)
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
MSS50
MSS40
Tcase(°C)
α =180°
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL [T j] / IG T,IH,IL [Tj = 25°C]
2.5
2.0
1.5
1.0
0.5
0.0
IGT
IH & IL
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140 160
3/5
MSS40 / 50 Series
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM(A)
700
600
500
400
300
MSS40
MSS50
Non repetitive
Tj initial = 25°C
MSS50
Repetitive
Tcase = 85°C
t = 20ms
One cycle
200
100
MSS40
Repetitive
Tcase = 80°C
0
1 10 100
Number of c
ycles
Fig. 7-1: On-state characteristics (maximum
values) (MSS40).
ITM(A)
500
Tj max.:
Vto = 0.85V
Rd = 11mΩ
Tj = Tjmax.
Fig. 6:Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10 ms, and
corresponding value of I²t.
ITSM(A), I t(A S)
5000
1000
100
0.01 0.10 1.00 10.00
22
Fig. 7-2: On state characteristics (maximum
values) (MSS50).
ITM(A)
1000
Tj max.:
Vto = 0.85V
Rd = 7mΩ
Tj = Tjmax.
100
Tj = 25°C
VTM(V)
10
0.0 1.0 2.0 3.0 4.0 5.0 6.0
100
Tj = 25°C
10
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VTM(V)
4/5
MSS40 / 50 Series
PACKAGE MECHANICAL DATA
ISOTOP™
DIMENSION S
REF.
Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0 .75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 3 8.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
■ Recommended torque value: 1.3 Nm (max. 1.5 Nm) for the 6 x M4 screws (2 x M4 screws recom-
mended for mounting the package on the heatsink and the 4 provided screws.
■ The screws supplied with the package are adapted for mounting on a board (or other types of termi-
nals) with a thickness of 0.6 mm min. and 2.2 mm max.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of su ch in for mat i on n or f or a ny in fr ing em ent of pa te nts or o ther r igh ts of th ir d pa r tie s w hic h may res ul t f rom i ts us e. No license is granted
by impl i cation or ot herwise under any patent or patent r i ght s of STMi croelectro ni cs. Specif i cations mentioned i n this publ i cation are subje ct
to change wi t hout notice. T hi s publicati on supersede s and replaces all in formation previously supplied. STM i croelectro ni cs products are not
authori zed for use as cr i tical compo nents in life support devices or systems without ex press written approva l o f ST M i croelectr o nics.
© The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved
Australi a - Brazil - Chi na - Finlan d - F rance - Germ any - Hong Kon g - India - Italy - Japan - Ma l aysia - Malta - Morocco
STMicroele ct ronics GROUP OF COM PANIES
Singapo re - Spain - Sweden - Swit zerland - Un i ted Kingdom
http://w ww.st.com
5/5
Loading...