SGS Thomson Microelectronics MSS50-800, MSS40-1200, MSS40-800, MSS50-1200 Datasheet
®
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
55 and 70 A
800 and 1200 V
50 mA
DESCRIPTION
Packaged in ISOTOP modules, the MSS40 /
MSS50 Series is based on two back-to-back SCR
configurations, providing high noise immunity.
They are suitable for high power applications such
as solid state relays, heating control systems,
welding equipment, motor control circuits...
The compactness of the ISOTO P package allows
high power density and optimized power bus
connections. Thanks to their internal ceramic pad,
they provide high voltage insulation (2500V
RMS),
complying with UL standards (File ref: E81734).
PIN CONNECTIONS
MSS40 / 50 Series
BACK TO BACK SCR MODULE
A2
G2
ISOTOP®
G1
A1
G1
1:Thyristor 2 Anode (A2)
2:Thyristor 2 Gate (G2)
3:Thyristor 1 Anode (A1)
4:Thyristor 1 Gate (G1)
4
1
3
A1 A2
2
G2
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
MSS40 MSS50
I
T(RMS)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
T
V
RGM
ISOTOP is a registre d trademark of STMicroelectronic s
September 2000 - Ed: 3
RMS on-state current Tc = 80 °C 55
Tc = 85 °C 70
Non repetitive surge peak on-state
current
tI
j
²
t Value for fusing
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage 5 V
tp = 16.7 ms
tp = 20 ms 400 600
tp = 10 ms Tj = 25°C 800 1800
F = 120 Hz Tj = 125°C 50 A/µs
Tj = 25°C
420 630
- 40 to + 150
- 40 to + 125
A
A
2
S
A
°C
1/5
MSS40 / 50 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions
I
GT
VD = 12 V RL = 33 Ω
V
GT
V
GD
I
H
I
L
dV/dt
VD = V
RL = 3.3 kΩ
DRM
IT = 500 mA Gate open
IG = 1.2 I
V
= 67 % V
D
GT
Gate open
DRM
ITM = 80 A tp = 380 µs
V
TM
V
R
I
DRM
I
RRM
t0
d
= 100 A tp = 380 µs
I
TM
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 11 7 mΩ
V
DRM
/ V
RRM
RATED
THERMAL RESISTANCES
Value
Unit
MSS40 MSS50
MIN. 5 mA
MAX. 50
MAX. 1.3 V
Tj = 125°C MIN. 0.2 V
MAX. 80 mA
MAX. 120 mA
Tj = 125°C MIN. 1000 V/µs
1.7 -
Tj = 25°C MAX.
V
- 1.7
Tj = 25°C MAX. 20 µA
Tj = 125°C 10 mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC) MSS40 0.6 °C/W
MSS50 0.45
PRODUCT SELECTOR
Part Number
MSS40-xxx X X 50 mA
MSS50-xxx X X 50 mA
Voltage (xxx)
800 V 1200 V
Sensitivity
Package
ISOTOP
ISOTOP
ORDERING INFORMATION
MSS 40 - 800
SCR
MODULE
SERIES
CURRENT:
40: 55A
50: 70A
VOLTAGE:
800: 800V
1200: 1200V
TM
TM
2/5
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