SGS Thomson Microelectronics MSC83305 Datasheet

RF & MICROWAVE TRANSISTORS

.REFRACTORY/GOLD METALLIZATION

.EMITTER BALLASTED

.VSWR CAPABILITY

CONDITIONS

.HERMETIC STRIPAC

.P

= 4.5 W MIN. WITH 4.5 dB GAIN

OUT

@ 3.0 GHz

:1 @ RATED

∞



PACKAGE

ORDER CO DE

MSC83305

PIN CONNECTION

MSC83305

GENERAL PURPOSE AMPLIFIER APPLICATIONS

.250 2LFL (S010)

hermetically sealed

BRANDING

83305

DESCRIPTION

The MSC83305 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an emitter site ballasted geometry with a
refractory gold metallization system. This device
is capable of withstanding an infinite load VSWR
at any phase angle under rated conditions. The
MSC83305 was design ed for Cla ss C ampli fi er/os ­cillator applications in the 1.0 - 3.0 GHz frequency
range.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

P

DISS

I

C

V

CC

T

J

T

STG

THERMAL DATA

R

TH(j-c)

*Applies only to rated RF amplifier operation

Power Dissipation* (TC ≤ 50˚C) 17.6 W
Device Current* 700 mA
Collector-Supply Voltage* 30 V
Junction Temperature 200
Storage Temperature

Junction-Case Thermal Resistance* 8.5

case

= 25°C)

1. Collector 3. Emitter

2. Base 4. Base

65 to +200

−

°
°

°

C/W

C
C

October 1992

1/5

MSC83305

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol Test Condi tions

BV
BV
BV

I

CBO

h

CBO
EBO
CER

FE

IC = 1mA IE = 0mA 45 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 5mA RBE = 10Ω 45 — — V
VCB = 28V — — 0 .5 mA
VCE = 5V IC = 500mA 30 — 300 —

Min. Typ. Max.

Valu e

DYNAMIC

Symbol Test Conditi ons

P

OUT

η

cf = 3.0 GHz PIN = 1.59 W VCC = 28 V 30 33 — %

G

P

C

OB

f = 3.0 GHz PIN = 1.59 W VCC = 28 V 4.5 5.0 — W

f = 3.0 GHz PIN = 1.59 W VCC = 28 V 4.5 5.0 — dB
f = 1 MHz VCB = 28 V — — 7.5 pF

Value

Min. Typ. Max.

Unit

Unit

TYPICAL PERFORMANCE

POWER OUTPUT vs FREQUENCY

COLLECTOR EFFICIENCY vs FREQUENCY

PERCENT POWER OUTPUT & COLLECTOR

EFFICIENCY vs COLLECTOR VOLTAGE

2/5