SGS Thomson Microelectronics MSC82307 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.HERMETIC STRIPAC
.P
= 7.0 W MIN. WITH 9.6 dB GAIN
OUT
PACKAGE
ORDER CO DE
MSC82307
PIN CONNECTION
MSC82307
GENERAL PURPOSE AMPLIFIER APPLICATIONS
PRELIMINARY DATA
.250 2LFL (S010)
hermetical ly sealed
BRANDING
82307
DESCRIPTION
The MSC82307 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizi ng a rugg ed overla y die geometry. This devic e
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82307 was designed for Class C amplifier/oscillator applications in the 1.5 - 2.3 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
Power Dissipation* (TC ≤ 50˚C) 21.4 W
Device Current* 1.2 A
Collector-Supply Voltage* 26 V
Junction Temperature 200
Storage Temperature
Junction-Case Thermal Resistance* 7.0
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
°
°
C/W
C
C
October 1992
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MSC82307
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
BV
I
CBO
h
CBO
EBO
CER
FE
IC = 1mA IE = 0mA 44 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 5mA RBE = 10Ω 44 — — V
VCB = 22V — — 0 .5 mA
VCE = 5V IC = 500mA 30 — 300 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf = 2.3 GHz PIN = 0.76 W VCC = 22 V 40 45 — %
G
P
C
OB
f = 2.3 GHz PIN = 0.76 W VCC = 22 V 7.0 8.0 — W
f = 2.3 GHz PIN = 0.76 W VCC = 22 V 9.6 10.2 — dB
f = 1 MHz VCB = 22 V — — 8.5 pF
Value
Min. Typ. Max.
Unit
Unit
TEST CIRCUIT
Ref.: Dwg. No. C125518
All dimensions are in inches.
Frequency 2.3 GHz
RF Amplifier Power Output Test
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