SGS Thomson Microelectronics MSC82306 Datasheet
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.REFRACTORY\GOLD METALLIZATION
.VSWR CAPABILIT Y 20:1 @ R AT ED
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
5.5 W MIN. WI TH 9.6 dB GAIN
=
PACKAGE
MSC82306
PRELIMINARY DATA
.250 2LF L (S010)
hermeticallysealed
ORDER CODE
MSC82306
PIN CONNECTION
DESC RIPTI ON
The MSC82306 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overaly diegeometry. Thisdevice
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82306 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 50°C) 16.7 W
Device Current* 900 mA
Collector-Supply Voltage* 26 V
Junction Temperature 200
Storage Temperature − 65 to +200
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
82306
°
C
°
C
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
October 1992
Junction-Case Thermal Resistance* 9.0
°
C/W
1/4
MS C8 2 306
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 44 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 44 — — V
VCB= 22V — — 0.5 mA
VCE= 5V IC= 400mA 30 — 300 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf=2.3 GHz P
G
P
C
OB
f = 2.3 GHz P
f = 2.3 GHz P
f = 1 MHz V
0.6 W V
=
IN
0.6 W V
=
IN
0.6 W V
=
IN
22 V — — 7.0 pF
CB =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
22 V 5.5 6.3 — W
=
CC
22 V 40 45 — %
=
CC
22 V 9.6 10.2 — dB
=
CC
Unit
Unit
2/4
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