SGS Thomson Microelectronics MSC82302 Datasheet
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
1.8 W MIN. WITH 10.0 dB G AIN
=
PACKAGE
ORDER CODE
MSC82302
PIN CONNECTION
MSC82302
PRELIMINARY DATA
.250 2LF L (S010)
hermetically sealed
BRANDING
82302
DESC RIPT ION
The MSC82302 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overlay diegeometry. Thisdevice
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82302 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
Power Dissipation* (TC≤ 50°C) 6.0 W
Device Current* 300 mA
Collector-Supply Voltage* 26 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 25
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
1/4
MS C82302
ELECTRICAL SPECIF ICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 44 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 44 — — V
VCB= 22V — — 0.5 mA
VCE= 5V IC= 100mA 30 — 300 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf=2.3 GHz P
G
P
C
OB
f = 2.3 GHz P
f = 2.3 GHz P
f = 1 MHz V
0.18 W V
=
IN
0.18 W V
=
IN
0.18 W V
=
IN
22 V — — 3.5 pF
CB =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
22 V 1.8 — — W
=
CC
22 V 40 — — %
=
CC
22 V 10.0 — — dB
=
CC
Unit
Unit
2/4
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