SGS Thomson Microelectronics MSC82100 Datasheet
RF & MICROWAVE TRANSIST ORS
GENERAL PURPOSE LINEAR APPLICA TIONS
.EMITT ER BALLASTED
. CLASS A LINEAR OPERATION
. CO MMON EMITTER
.VSW R CAPABILITY
CONDITIONS
:1 @ RATED
∞
.ft 1.6 GHz TYPICAL
.NOISE FIGURE 15.5 d B @ 2 GHz
.P
OUT
27 dBm MIN. @ 1.0 GHz
=
ORDER CODE
MSC82100
PIN CONNECTION
MSC82100
.250 2LFL (S011)
hermetically sealed
BRANDING
82100
DESC RIPT ION
The MSC82100 is a hermetically sealed NPN
power transistor with a fishbone, emitter finger
ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide
high gain and high output power at the 1.0 dB
compression point.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CE
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
Power Dissipation (see Safe Area) — W
Device Bias Current 200 mA
Collector-Emitter Bias Voltage* 20 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 20
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
°
°
°
C/W
C
C
October 1992
1/6
MS C82100
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CEO
CEO
h
FE
IC= 1mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA IB= 0mA 20 — — V
VCE= 18V — — 0.5 mA
VCE= 5V IC= 100mA 15 — 120 —
DYNAMIC
Symbol Test Conditi ons
GP*f=1.0 GHz P
∆GP*f=1.0 GHz P
C
OB
* Note: V
f = 1 MHz V
18V
=
CE
I
100mA
=
C
27 dBm 10.5 11.5 — dB
=
OUT
27 dBm
=
OUT
28 V — — 3.2 pF
=
CB
Value
Min. Typ. Max.
Value
Min. Typ. Max.
P
∆
= 10 dB — — 1 dB
OUT
Unit
Unit
2/6
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