GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. VSWR CAPABILITY
CONDITIONS
∞
.HERMETIC STRIPAC
. P
OUT
2.0 GHz
10 W MIN. WITH 5.2 dB GAIN @
=
:1 @ RATED
PACKAGE
MSC82010
RF & MICROWAVE TRAN SIST ORS
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82010
PIN CONNECTION
BRANDING
82010
DESC RIPTIO N
The MSC82010 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82010 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RF amplifier operation
Power Dissipation* 35 W
Device Current* 1.5 A
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 5.0
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
1/5
MS C82 010
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 5mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 15mA RBE= 10Ω 45 — — V
VCB= 28V — — 5.0 mA
VCE= 5V IC= 1000mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=2.0 GHz P
G
P
C
OB
f = 2.0 GHz P
f = 2.0 GHz P
f = 1 MHz V
3.0 W V
=
IN
3.0 W V
=
IN
3.0 W V
IN =
28 V — — 19 pF
=
CB
TYPICA L P ERFO R MA NCE
POWER O UTPUT vs FREQUENCY
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 10 11.5 — W
=
CC
28 V 35 38 — %
=
CC
28 V 5.2 5.8 — dB
CC =
COLLECTOR EFFICIENCY vs
FREQUENCY
Unit
Unit
2/5
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE