SGS Thomson Microelectronics MSC82005 Datasheet
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. VSWR CAPABILITY
CONDITIONS
:1 @ RATED
∞
.REFRACTORY/GOLD METALLIZATION
.HERMETIC STRIPAC
. P
OUT
@2.0GHz
5.0 W MIN. WITH 7. 0 dB GAIN
=
PACKAGE
ORDER CODE
MSC82005
PIN CONNECTION
MSC82005
.250 2LFL (S010)
hermetically sealed
BRANDING
82005
DESC RIPT ION
The MSC82005 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle underrated rated conditions. The
MSC82005 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
Power Dissipation* 29 W
Device Current* 1.0 A
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 6.0
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
1/5
MS C82005
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 45 — — V
VCB= 28V — — 2.5 mA
VCE= 5V IC= 500mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=2.0 GHz P
G
P
C
OB
f = 2.0 GHz P
f = 2.0 GHz P
f = 1 MHz V
1.0 W V
IN =
1.0 W V
=
IN
1.0 W V
=
IN
28 V — — 10 pF
=
CB
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 5.0 6.0 — W
CC =
28 V 35 40 — %
=
CC
28 V 7.0 7.8 — dB
=
CC
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPUT vs FREQUENCY
COLLECTOR EFFICIENCY vs
FREQUENCY
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
2/5
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