SGS Thomson Microelectronics MSC82003 Datasheet
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. VSWR CAPABILITY
CONDITIONS
:1 @ RATED
∞
.REFRACTORY/GOLD METALLIZATION
.HERMETIC STRIPAC
. P
OUT
@2.0GHz
3.0 W MIN. WITH 7. 8 dB GAIN
=
PACKAGE
ORDER CODE
MSC82003
PIN CONNECTION
MSC82003
.250 2LFL (S010)
hermetically sealed
BRANDING
82003
DESC RIPT ION
The MSC82003 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle underrated rated conditions. The
MSC82003 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
Power Dissipation* 21.8 W
Device Current* 600 mA
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 8.0
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
1/5
MS C82003
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 45 — — V
VCB= 28V — — 1.0 mA
VCE= 5V IC= 200mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=2.0 GHz P
G
P
C
OB
f = 2.0 GHz P
f = 2.0 GHz P
f = 1 MHz V
0.5 W V
IN =
0.5 W V
=
IN
0.5 W V
=
IN
28 V — — 6.5 pF
=
CB
TYPICA L P ERFO R MA NCE
POWER OUTPUT vs FREQUENCY
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 3.0 3.3 — W
CC =
28 V 35 37 — %
=
CC
28 V 7.8 8.2 — dB
=
CC
COLLECTOR EFFICIENCY vs
FREQUENCY
Unit
Unit
2/5
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
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