SGS Thomson Microelectronics MSC81450M Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 25:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
450 W MIN. WITH 7.0 dB GAIN
=
MSC81450M
AVIONICS APPLICAT ION S
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
MSC81450M
PIN CONNECTIO N
DESCRIP TIO N
The MSC81450M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstandinga minimum
25:1 load mismatch at any phase angle under full
rated conditions.
The MSC81450M is housed in the unique BIGPAC package with internal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* 910 W
Device Current* 28 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
BRAN DI NG
81450M
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Appliesonly toratedRF amplifieroperation
Junction-CaseThermal Resistance* 0.15
°
C/W
MSC81450M
ELECTRICAL S PEC I FICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBO
BV
EBO
BV
CER
I
CES V
h
FE V
IC= 15mA IE= 0mA
IE= 1mA IC= 0mA
IC= 50mA RBE= 10Ω 65 — — V
= 50V
CE
= 5V IC= 1A
CE
DYNAMIC
Symbol Test Conditions
P
OUT f = 1090 MHz P
η
cf=1090 MHz P
G
P f = 1090 MHz P
Note: P ulse Width=10µSec
Duty Cycle
1%
=
= 90 W VCC= 50 V
IN
= 90 W VCC= 50 V
IN
= 90 W VCC= 50 V
IN
Value
Min. Typ . Max.
Uni t
65 — — V
3.5 — — V
— — 35 mA
15 — 120 —
Value
Min. Typ. Max.
Uni t
450 500 — W
40 — — %
7.0 — — dB
TEST CIRCUIT
Ref.: Dwg. No. C125363
All dimensions are in inches.
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