SGS Thomson Microelectronics MSC81402 Datasheet

RF & MICROWAVE TRANSISTORS

.REFRACTORY/GOLD METALLIZATION

.HIGH GAIN & COLLECTOR EFFICIENCY

.RUGGED OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

= 2.0 W MIN. WITH 10.0 dB GAIN

OUT

ORDER CO DE

MSC81402

PIN CONNECTION

MSC81402

GENERAL PURPOSE AMPLIFIERS APPLICATIONS

PRELIMINARY DATA

.250 2LFL (S010)

hermetical ly sealed

BRANDING

81402

DESCRIPTION

The MSC81402 is a 28 Volt, Class C, common
base NPN bi pl oar dev ice designe d f or gen eral pur ­pose amp lifier applications in t he UHF and L-Band
frequency range.

High gain and collector efficiency along with ex­treme ruggedness are obtained using a gold me­tallized emitter-ballasted overlay die geometry.

ABSOLUTE M AXIMUM RATINGS (T

Symbol Parameter Value Unit

P

DISS

I

C

V

CC

T

J

T

STG

THERMAL DATA

R

TH(j-c)

*Applies only to rated RF amplifier operation

Power Dissipation* (TC ≤ 50˚C) 6 W
Device Current* 0.23 A
Collector-Supply Voltage* 30 V
Junction Temperature 200
Storage Temperature

Junction-Case Thermal Resistance* 25

case

= 25°C)

1. Collector 3. Emitter

2. Base 4. Base

65 to +200

−

°
°

°

C/W

C
C

October 1992

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MSC81402

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol Test Condition s

BV
BV
BV

I

CBO

h

CBO
EBO
CER

FE

IC = 1mA IE = 0mA 50 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 5mA RBE = 10Ω 50 — — V
VCB = 28V — — 0. 5 mA
VCE = 5V IC = 100mA 30 — 300 —

Min. Typ. Max.

Valu e

DYNAMIC

Symbol Test Conditions

P

OUT

η

cf = 1.4 GHz PIN = 0.2W VCC = 28V 50 — — %

G

P

C

OB

f = 1.4 GHz PIN = 0.2W VCC = 28V 2.0 — — W

f = 1.4 GHz PIN = 0.2W VCC = 28V 10.0 — — dB
f = 1MHz VCB = 28V — 3.2 — pF

Value

Min. Typ. Max.

Unit

Unit

PACKAGE MECHANICAL DATA

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