SGS Thomson Microelectronics MSC81400M Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 25:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 400 W MIN. WITH 6.5 dB GAIN
OUT
.400 x .500 2LFL (S038)
ORDER CO DE
MSC81400M
PIN CONNECTION
MSC81400M
AVIONICS APPLICATIONS
hermetical ly sealed
BRANDING
81400M
DESCRIPTION
The MSC81400M "Super Power" transistor is a
high peak pulse power device specifically designed for DME/TACAN avionics applications.
This device is capable of withstanding a minimum
25:1 load mismatch condition at any phase angle
under full rated conditions.
The MSC81400M is housed in the unique BIGPAC™ hermetic metal/ceramic package with internal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
Power Dissipation* (TC ≤ 80˚C) 1000 W
Device Current* 28 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-Case Thermal Resistance* 0.12
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
°
°
C/W
C
C
October 1992
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MSC81400M
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV
BV
BV
I
CBO
EBO
CER
CES
h
FE
IC = 15mA IE = 0mA 65 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 50mA RBE = 10Ω 65 — — V
VCE = 50V — — 35 mA
VCE = 5V IC = 1A 15 — 120 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test C ond iti ons
P
OUT
η
cf = 1025 — 1150 MHz PIN = 90 W VCC = 50 V 40 — — %
G
P
Note: Pulse Widt h=10µSec
f = 1025 — 1150 MHz PIN = 90 W VCC = 50 V 400 450 — W
f = 1025 — 1150 MHz PIN = 90 W VCC = 50 V 6.5 — — dB
Duty Cycle=1%
Value
Min. Typ. Max.
Unit
Unit
TEST CIRCUIT
Ref.: Dwg. No. C125363
All dimensions are in inches.
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