SGS Thomson Microelectronics MSC81350M Datasheet

RF & MICROWAVE TRAN SIST ORS

.REFRACTORY/GOLD METALLIZATION

.RUGGEDIZED VSWR 20:1

.INTERNAL I NPUT/OUTPUT MATCHING

.LOW THERMAL RESISTANCE

.METAL/CERAMIC HERMETIC PACKAGE

.P

OUT =

DESC RIPT ION

The MSC81350M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.

This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.

The MSC81350M is housed in the unique
AMPAC package with internal input/output
matching structures.

350 W MIN. WITH 7.0 dB GAIN

MSC81350M

AVIONI CS APPLICAT IONS

.400 x .400 2NL F L (S04 2)

hermetically sealed

ORDER CODE

MSC81350M

PIN CONNECTION

1. Collector 3. Emitter

2. Base 4. Base

BRANDING

81350M

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Uni t

P

DISS

I

C

V

CC

T

J

T

STG

THERMA L DATA

R

TH(j-c)

*Appliesonly to ratedRF amplifieroperation

October 1992

Power Dissipation* (TC≤ 55°C) 720 W
Device Current* 19.8 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200

Junction-Case Thermal Resistance* 0.20

case

= 25°C)

°
°

°

C/W

C
C

1/5

MS C81350M

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol Test Conditions

BV
BV
BV

I

CES

h

CBO
EBO
CER

FE

IC= 10mA IE= 0mA 65 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 25mA RBE= 10Ω 65 — — V
VCE= 50V — — 25 mA
VCE= 5V IC= 1A 15 — 120 —

DYNAMIC

Symbol Test Conditi ons

P

OUT

η

cf=1090 MHz P

G

P

Note: Pulse Width=10µSec

f = 1090 MHz P

f = 1090 MHz P

Duty Cycle=1%

70 W V

IN =

70 W V

=

IN

70 W V

=

IN

Value

Min. Typ. Max.

Value

Min. Typ. Max.

50 V 350 360 — W

CC =

50 V 40 44 — %

=

CC

50 V 7.0 7.1 — dB

=

CC

Unit

Unit

2/5