SGS Thomson Microelectronics MSC81250M Datasheet
RF & MICROWAVE TRAN SIST ORS
.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 20:1
.INTERNAL I NPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
DESC RIPT ION
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81250M is housed in the unique
AMPAC package with internal input/output
matching structures.
250 W MIN. WITH 6.2 dB GAIN
MSC81250M
AVIONI CS APPLICAT IONS
.400 x .400 2NL F L (S04 2)
hermetically sealed
ORDER CODE
MSC81250M
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
81250M
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
October 1992
Power Dissipation* (TC≤ 80°C) 600 W
Device Current* 17.8 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 0.20
case
= 25°C)
°
°
°
C/W
C
C
1/5
MS C81250M
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 10mA IE= 0mA 65 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 25mA RBE= 10Ω 65 — — V
VCE= 50V — — 25 mA
VCE= 5V IC= 1A 15 — 120 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf=1025 — 1150 MHz P
G
P
Note: Pulse Width=10µSec
f = 1025 — 1150 MHz P
f = 1025 — 1150 MHz P
Duty Cycle=1%
60 W V
IN =
60 W V
=
IN
60 W V
=
IN
Value
Min. Typ. Max.
Value
Min. Typ. Max.
50 V 250 270 — W
CC =
50 V 40 38 — %
=
CC
50 V 6.2 6.5 — dB
=
CC
Unit
Unit
2/5
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