SGS Thomson Microelectronics MSC81111 Datasheet
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. REFRACTORY/GOLD METALLIZATION
.VSWR CAPABILITY
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
1 GHz
5.0 W MIN. WITH 10 dB GAIN @
=
:1 @ RATED
∞
PACKAGE
ORDER CODE
MSC81111
PIN CONNECTION
MSC81111
.250 2LFL (S010)
hermetically sealed
BRANDING
81111
DESC RIPT ION
The MSC81111 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC81111 is designed for Class C amplifier applications in the 0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
Power Dissipation* (TC≤ 50°C) 18.75 W
Device Current* 600 mA
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 8.0
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
1/5
MS C81111
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 45 — — V
VCB= 28V — — 1.0 mA
VCE= 5V IC= 200mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=1.0 GHz P
G
P
C
OB
f = 1.0 GHz P
f = 1.0 GHz P
f = 1 MHz V
0.5 W V
IN =
0.5 W V
=
IN
0.5 W V
=
IN
28 V — — 6.5 pF
=
CB
TYPICA L P ERFO R MANCE
POWER OUTPUT vs FREQUENCY
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 5.0 6.6 — W
CC =
28 V 50 52 — %
=
CC
28 V 10 11.2 — dB
=
CC
COLLECTOR EFFICIENCY
vs FREQUENCY
Unit
Unit
2/5
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
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