SGS Thomson Microelectronics MSC81020 Datasheet
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. REFRACTORY/GOLD METALLIZATION
.LOW THERMAL RESISTANCE
.HERMETIC STRIPAC
. P
OUT
@1GHz
20 W MIN. WITH 10 dB GAIN
=
PACKAGE
.230 2L STUD (S016)
ORDER CODE
MSC81020
PIN CONNECTION
MSC81020
hermetically sealed
BRANDING
81020
DESC RIPT ION
The MSC81020 is a common base hermetically
sealed silicon NPN microwave tranisitor utilizing
a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is
designed for Class C amplifier applications in the
0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
Power Dissipation* 35 W
Device Current* 1.50 A
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 5.0
case
= 25°C)
1. Collector 3. Emitter
2. Base
°
°
°
C/W
C
C
October 1992
1/5
MS C81020
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 5mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 15mA RBE= 10Ω 45 — — V
VCB= 28V — — 5.0 mA
VCE= 5V IC= 1000mA 15 — 120 —
DYNAMIC
Symbol Test Cond itions
P
OUT
η
cf=1.0 GHz P
G
P
C
OB
f = 1.0 GHz P
f = 1.0 GHz P
f = 1 MHz V
2.0 W V
IN =
2.0 W V
=
IN
2.0 W V
=
IN
28 V — — 19 pF
=
CB
TYPICA L PERFO R MA NCE
POWER OUTPUT vs FREQUENCY
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 20 21 — W
CC =
28 V 55 58 — %
=
CC
28 V 10 10.2 — dB
=
CC
COLLECTOR EFFICIENCY
vs FREQUENCY
Unit
Unit
2/5
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
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