SGS Thomson Microelectronics MSC81002 Datasheet
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. VSWR CAPABILITY
CONDITIONS
∞
.HERMETIC STRIPAC
. P
OUT
1 GHz
2.0 W MIN. WITH 10 dB GAIN @
=
:1 @ RATED
PACKAGE
MSC81002
RF & MICROWAVE TRAN SIST ORS
.230 2L STUD (S016)
hermetically sealed
ORDER CODE
MSC81002
PIN CONNECTION
BRANDING
81002
DESC RIPTIO N
The MSC81002 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated conditions.
The MSC81002 was designed forClass Camplifier
applications in the 0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to rated RF amplifier operation
Power Dissipation* (TC≤ 75°C) 6.25 W
Device Current* 200 mA
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 20
case
= 25°C)
1. Collector 3. Emitter
2. Base
°
°
°
C/W
C
C
October 1992
1/5
MS C81 002
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 45 — — V
VCB= 28V — — 0.5 mA
VCE= 5V IC= 100mA 15 — 120 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf=1.0 GHz P
G
P
C
OB
f = 1.0 GHz P
f = 1.0 GHz P
f = 1 MHz V
0.2 W V
=
IN
0.2 W V
=
IN
0.2 W V
IN =
28 V — — 3.2 pF
=
CB
TYPICA L PERFO R MA NCE
POWER O UTPUT vs FREQUENCY
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 2.0 2.2 — W
=
CC
28 V 50 55 — %
=
CC
28 V 10 10.4 — dB
CC =
COLLECTOR EFFICIENCY vs
FREQUENCY
Unit
Unit
2/5
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
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