SGS Thomson Microelectronics MSC80195 Datasheet

RF & MICROWAVE TRANSISTORS

.EMITTER BALLASTED

.CLASS A LINEAR OPERATION

.COMMON EMITTER

.VSWR CAPABILITY 20:1 @ RATED

CONDITIONS

.ft 3.2 GHz TYPICAL

.NOISE FIGURE 12.0 dB @ 2 GHz

.P

= 28 dBm MIN. @ 2.0 GHz

OUT

ORDER CO DE

MSC80195

PIN CONNECTION

MSC80195

GENERAL PURPOSE LINEAR APPLICATIONS

.250 2LFL (S011)

hermetical ly sealed

BRANDING

80195

DESCRIPTION

The MSC80195 is a hermetically sealed NPN
power tra nsistor featur ing a unique m atrix struc ture.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

P

DISS

I

C

V

CE

T

J

T

STG

THERMAL DATA

R

TH(j-c)

*Applies only to rated RF amplifier operation

October 1992

Power Dissipation (see Safe Area) — W
Device Bias Current 300 mA
Collector-Emitter Bias Voltage* 20 V
Junction Temperature 200
Storage Temperature

Junction-Case Thermal Resistance* 35

case

= 25°C)

1. Collector 3. Baser

2. Emitter 4. Emitter

65 to +200

−

°
°

°

C/W

C
C

1/6

MSC80195

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol Test Condition s

BV
BV
BV

I

CBO
EBO
CEO

CEO

h

FE

IC = 1mA IE = 0mA 50 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 5mA IB = 0mA 20 — — V
VCE = 18V — — 0. 5 mA
VCE = 5V IC = 100mA 15 — 120 —

DYNAMIC

Symbol Test Conditions

GP*f = 2.0 GHz P

∆GP*f = 2.0 GHz P

C

OB

* Note: VCE = 18 V

f = 1 MHz VCB = 28 V — — 3.0 pF

IC

140mA

=

= 28 dBm — — 1 dB

OUT

28 dBm

=

OUT

Valu e

Min. Typ. Max.

Value

Min. Typ. Max.

P

= 10 dB 7.5 8.5 — dB

∆

OUT

Unit

Unit

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