SGS Thomson Microelectronics MSC1004MP Datasheet

.1025 - 1150 MHz
.RUGGEDIZED VSWR :1
.INTERNAL INPUT MATCHING
.LOW THERMAL RESISTANCE
OUT
4.0 W MIN. WITH 9.0 dB GAIN
=
MSC1004MP
RF & MICROWAVE TRANSISTORS
AVIONICS APPLIC ATIONS
.280 4LFL (SO51)
epoxy sealed
ORDER CODE
MSC1004MP
PIN CONNECTION
DESCRIPTION
The MSC1004MP is a low-level Class C pulsed transistor specifically designedfor DME/IFF driver or output applications.
case
:1
1. Collector 3. Emitter
2. Base 4. Base
= 25°C)
18 W
65 to +150
These devices are capable of withstanding a load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and auto­matic bonding techniques ensure high reliability and product consistency.
The MSC1004MP is housed in the IMPAC package with internal input matching.
ABSOLUT E MAXI MUM RATING S (T
Symbol Parameter Valu e Unit
P
T
DISS
I
V
T
STG
C
CC
J
Power Dissipation* (TC≤ 100°C) Device Current* 650 mA
Collector-SupplyVoltage* 32 V Junction Temperature 200 Storage Temperature
BRAND I NG
1004MP
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
June 12, 1995 1/3
Junction-CaseThermal Resistance* 5
°
C/W
MSC1004MP
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol T est Conditions
BV
CBO
BV
CER
BV
EBO I
I
CES V
h
FE V
IC= 1mA IE=0mA IC= 5mA RBE= 10 45 V
= 1mA IC=0mA
E
= 28 V
CE
= 5V IC=200 mA
CE
DYNAMIC
Symbol Test C onditi ons
P
OUT
η
G
Note: Pulse Width=10µSec
f = 1025 1150 MHz P
cf=1025 1150 MHz P
f=1025 1150 MHz P
P
Duty Cycl e
1%
=
500 mW V
=
IN
500 mW V
=
IN
500 mW V
=
IN
CC CC CC
= = =
28 V 28 V 28 V
Value
Min. Typ. Max.
Unit
45 V
3.5 V — 1.0 mA
30 300
Value
Min. Typ. Max.
4.0
35
9.0
  
Unit
—W —% —dB
TEST CIRCUIT
Ref.: Dwg. No. C127299
All dimensions are in inches.
June 12, 1995 2/3
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