SGS Thomson Microelectronics MMBT3906 Datasheet
®
SMALL SIGNAL PNP TRANSISTOR
Type Marking
MMBT3906 36
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTOR
■ MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE NPN COM PLE M ENT A RY TY P E IS
MMBT3904
MMBT3906
PRELIMINARY DATA
APPLICATIONS
■ WELL SUITABLE FOR PORT AB LE
SOT-23
EQUIPM ENT
■ SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) -60 V
CBO
Collector-Emitter Voltage (IB = 0) -40 V
CEO
Emitter-Base Voltage (IC = 0) -6 V
EBO
I
Collector Current -200 mA
C
Total Dissipation at TC = 25 oC 350 mW
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
June 2002
1/4
MMBT3906
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 357.1
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
BEX
V
(BR)CEO
Collector Cut-off
Current (V
= 3 V)
BE
Collector Cut-off
Current (V
= 3 V)
BE
∗ Collector-Emitter
= -30 V -50 nA
V
CE
= -30 V -50 nA
V
CE
= -1 mA -40 V
I
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= -10 µA
I
C
-60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= -10 µA
I
E
-6 V
Breakdown Voltage
(I
= 0)
C
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA
C
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA -0.65
C
hFE∗ DC Current Gain IC = -0.1 mA VCE = -1 V
I
= -1 mA VCE = -1 V
C
I
= -10 mA VCE = -1 V
C
I
= -50 mA VCE = -1 V
C
I
= -100 mA VCE = -1 V
C
f
NF Noise Figure V
C
CBO
Transition Frequency IC = -10mA VCE = -20 V f = 100MHz 250 MHz
T
= -5 V IC = -0.1 mA f = 10 Hz
CE
= 1 KΩ
G
Collector-Base
to 15.7 KHz R
IE = 0 VCB = -5 V f = 100 KHz 6 pF
60
80
100
60
30
-0.25
-0.4
-0.85
-0.95
300
4dB
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = -0.5 V f = 100 KHz 25 pF
Capacitance
t
t
Delay Time IC = -10 mA IB = -1 mA
d
Rise Time 35 ns
t
r
Storage Time IC = -10 mA IB1 = -IB2 = -1 mA
s
Fall Time 72 ns
t
f
V
V
CC
CC
= -3V
= -3V
35 ns
225 ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
V
V
V
V
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