SGS Thomson Microelectronics MMBT2907A Datasheet
®
SMALL S IGNAL PNP TRANSISTOR
Type Marking
MMBT2907A M29
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTOR
■ MINIATURE SOT- 23 PLAS TIC PA CKA GE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE & REEL PA C K ING
■ THE NPN COMP LE ME NT ARY TY PE IS
MMBT2222A
MMBT2907A
PRELIMINARY DATA
APPLICATIONS
■ WELL SUITABLE FOR PORT AB LE
SOT-23
EQUIPME NT
■ SMALL LOAD SW ITCH TR A NS IS TOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Emitter Voltage (IE = 0) -60 V
CBO
Collector-Emitter Voltage (IB = 0) -60 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
I
Collector Current -0.6 A
C
Collector Peak Current (tp < 5 ms) -0.8 A
CM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
= 25 oC 350 mW
amb
o
C
o
C
February 2003
1/4
MMBT2907A
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 357.1
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
BEX
I
CBO
V
(BR)CEO
Collector Cut-off
Current (V
= -3 V)
BE
Base Cut-off Current
(V
= -3 V)
BE
Collector Cut-off
Current (I
= 0)
E
∗ Collector-Emitter
= -30 V -50 nA
V
CE
= -30 V -50 nA
V
CE
= -50 V -10 nA
V
CB
I
= -10 mA -60 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= -10 µA
I
C
-60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= -10 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Collector-Base
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = -0.1 mA VCE = -10 V
FE
f
C
CBO
Transition Frequency IC = -50 mA VCE = -20V f = 100MHz 200 MHz
T
Collector-Base
IC = -150 mA IB = -15 mA
I
= -500 mA IB = -50 mA
C
IC = -150 mA IB = -15 mA
I
= -500 mA IB = -50 mA
C
-0.4
-1.6
-1.3
-2.6
75
I
= -1 mA VCE = -10 V
C
I
= -10 mA VCE = -10 V
C
I
= -150 mA VCE = -10 V
C
I
= -500 mA VCE = -10 V
C
100
100
100
50
300
IE = 0 VCB = -10 V f = 1 MHz 8 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = -2 V f = 1 MHz 30 pF
Capacitance
t
t
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Delay Time IC = -150 mA IB = -15 mA
d
t
Rise Time 40 ns
r
Switching On Time 45 ns
on
Storage Time IC = -150 mA IB1 = -IB2 = -15mA
s
t
Fall Time 30 ns
f
Switching Off Time 220 ns
off
V
V
= -30V
CC
= -30V
CC
190 ns
10 ns
V
V
V
V
2/4
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