SGS Thomson Microelectronics MMBT2222A Datasheet

®

SMALL SIGNAL NPN TRANSISTOR

Type Marking

MMBT2222A M22

■ SILICON EPI TAX IA L PLANAR N PN

TRANSISTOR

■ MINIATURE SOT- 23 PLAS TIC PA CKA GE

FOR SURFACE MOUNTING CIRCUITS

■ TAPE & REEL PA C K ING

■ THE PNP COMPLEMENTARY TYPE IS

MMBT2907A

MMBT2222A

PRELIMINARY DATA

APPLICATIONS

■ WELL SUITABLE FOR PORT AB LE

SOT-23

EQUIPME NT

■ SMALL LOAD SW ITCH TR A NS IS TOR WITH

HIGH GAIN AND LOW SATURATION
VOLTAGE

INTERNAL SCHEMATIC DIAGRAM

ABSOL UT E MAXIMU M RATINGS

Symbol Parameter Value Unit

V
V
V

I
P

T

Collector-Emitter Voltage (IE = 0) 75 V

CBO

Collector-Emitter Voltage (IB = 0) 40 V

CEO

Emitter-Base Voltage (IC = 0) 6 V

EBO

Collector Current 0.6 A

I

C

Collector Peak Current (tp < 5 ms) 0.8 A

CM

Total Dissipation at T

tot

Storage Temperature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

= 25 oC 350 mW

amb

o

C

o

C

February 2003

1/5

MMBT2222A

THERMAL DATA

R

• Device mounted on a PCB area of 1 cm2 .

• Thermal Resistance Junction-Ambient Max 357.1

thj-amb

o

C/W

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CEX

I

BEX

I

CBO

I

EBO

V

(BR)CEO

Collector Cut-off
Current (V

= -3 V)

BE

Base Cut-off Current
(V

= -3 V)

BE

Collector Cut-off
Current (I

= 0)

E

Emitter Cut-off Current
(I

= 0)

C

∗ Collector-Emitter

= 60 V 10 nA

V

CE

= 60 V 20 nA

V

CE

= 75 V

V

CB

V

= 75 V Tj = 150 oC

CB

= 3 V 15 nA

V

EB

= 10 mA 40 V

I

C

10
10

Breakdown Voltage
(I

= 0)

B

V

(BR)CBO

Collector-Base

= 10 µA

I

C

75 V
Breakdown Voltage
(I

= 0)

E

V

(BR)EBO

Emitter-Base

= 10 µA

I

E

6V
Breakdown Voltage
(I

= 0)

C

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Collector-Base

BE(sat)

Saturation Voltage

h

∗ DC Current Gain IC = 0.1 mA VCE = 10 V

FE

f

C

CBO

Transition Frequency IC = 20 mA VCE = 20V f = 100MHz 270 MHz

T

Collector-Base

IC = 150 mA IB = 15 mA
I

= 500 mA IB = 50 mA

C

IC = 150 mA IB = 15 mA
I

= 500 mA IB = 50 mA

C

0.6 1.2

0.3
1

2

35

I

= 1 mA VCE = 10 V

C

I

= 10 mA VCE = 10 V

C

I

= 150 mA VCE = 10 V

C

I

= 150 mA VCE = 1 V

C

I

= 500 mA VCE = 10 V

C

50
75

100

50
40

300

IE = 0 VCB = 10 V f = 1 MHz 4 8 pF

Capacitance

C

EBO

Emitter-Base

IC = 0 VEB = 0.5 V f = 1MHz 20 25 pF

Capacitance

NF Noise Figure I

h

∗ Input Impedance VCE = 10 V IC = 1 mA f = 1 KHz

ie

h

∗ Reverse Voltage Ratio VCE = 10 V IC = 1 mA f = 1 KHz

re

= 0.1 mA VCE = 10 V f = 1 KHz

C

∆f = 200 Hz R

V

= 10 V IC = 10 mA f = 1 KHz20.25

CE

V

= 10 V IC = 10 mA f = 1 KHz

CE

= 1 KΩ

G

4dB

8

1.25KΩKΩ
8

4

nA
µA

10
10

V
V

V
V

-4

-4

hfe∗ Small Signal Current

Gain

h

∗ Output Admittance VCE = 10 V IC = 1 mA f = 1 KHz

oe

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

VCE = 10 V IC = 1 mA f = 1 KHz
V

= 10 V IC = 10 mA f = 1 KHz

CE

V

= 10 V IC = 10 mA f = 1 KHz

CE

2/5

50
75

5

25

300
375

35

200

µS
µS