SGS Thomson Microelectronics MJE802 Datasheet
SILICON NPN POWER DARLINGTON TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
DESCRIPTION
The MJE802 and MJE803 are silicon
epitaxial-base NPN transistors in monolithic
Darlington configuration and are mounted in
Jedec SOT-32 plastic package.They are intended
for use in medium power linear and switching
applications.
SOT-32
MJE802
MJE803
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUT E MAXIMUM RATI NG S
Symbol Parameter Value Unit
V
V
V
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0)
CBO
Collector-Emitter Voltage (IB = 0)
CEO
Base-Emitter Voltage (IC = 0)
EBO
I
Collector Current
C
I
Base Current
B
Total Power Dissipation at T
tot
Storage Temperature
stg
T
Max Operating Junction Temperature
j
case
≤ 25 oC
80 V
80 V
5V
4A
0.1 A
40 W
-65 to 150
150
o
C
o
C
January 1997
1/4
MJE802-MJ803
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient Max
3.13
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
100
500
100 µA
2mA
I
CBO
I
CEO
I
EBO
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
= rated V
V
CB
VCB = rated V
T
100 oC
case =
= rated V
V
CE
= 5 V
V
EB
CBO
CBO
CEO
Collector-Emitter
CE(sat)
V
BE
h
∗
FE
h
fe
∗
Sustaining Voltage
(I
= 0)
B
Collector-Emitter
∗
Sustaining Voltage
∗
Base-Emitter Voltage
DC Current Gain
Small Signal Current
Gain
= 50 mA
I
C
I
= 4 A IB = 40 mA
C
I
= 1.5 A IB = 30 mA
C
= 4 A V
I
C
I
= 1.5 A V
C
= 4 A VCE = 3 V
I
C
I
= 1.5 A VCE = 3 V
C
IC = 1.5 A VCE = 3 V
f = 1 MHz
V
CEO(sus)
V
* Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%
CE
CE
= 3 V
= 3 V
80 V
3
2.5
3
2.5
100
750
1
µA
µA
V
V
V
V
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