SGS Thomson Microelectronics MJE521 Datasheet
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
DESCRIPTION
The MJE521 is a silicon epitaxial-base NPN
transistor in Jedec SOT-32 plastic package,
intended for use in 5 to 20W audio amplifiers,
general purpose amplifier and switching circuits.
MJE521
SILI CON NPN TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 40 V
CBO
Collector-Emitter Voltage (IB = 0) 40 V
CEO
Emitter-Base Voltage (IC = 0) 4 V
EBO
I
Collector Current 4 A
C
Collector Peak Current 8 A
CM
I
Base Current 2 A
B
Total Dissipation at Tc ≤ 25 oC40W
tot
Storage Temperature -65 to +150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
June 1997
1/4
MJE521
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient Max 3.12
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 40 V 100 µA
V
CB
= 4 V 100 µA
V
EB
I
= 0.1 A 40 V
C
Sustaining Voltage
(I
= 0)
B
h
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%
DC Current Gain IC = 1 A VCE = 1 V 40
FE
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