SGS Thomson Microelectronics MJE340, MJE350 Datasheet
COMPLEMETARY SILICON POWER TRANSISTORS
■ SGS-THOMSON PREFERRED SALESTYPES
■ COMPLEMENTARYPNP - NPNDEVICES
APPLICATIONS
■ LINEARANDSWITCHINGINDUSTRIAL
EQUIPMENT
DESCRIPTION
The MJE340 is a silicon epitaxial planar NPN
transistor intended for use in medium power
linear and switching applications.It is mounted in
SOT-32.
The complementaryPNP type is MJE350.
SOT-32
MJE340
MJE350
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val ue Uni t
NPN MJE340 Unit
PNP MJE35 0 Unit
V
V
P
T
For PNP typesvoltage and current values are negative.
Collect or- E m it ter V o lt age ( IB= 0 ) 300 V
CEO
Emitt er-Base Voltage (IC = 0) 3 V
EBO
I
Collect or Current 0.5 A
C
Tot al Power Dissip at ion at T
tot
Stora ge Temperatur e -65 to 150
stg
T
Max Operating Junction T em pera t ur e 150
j
≤ 25oC 20.8 W
case
o
C
o
C
June 1997
1/5
MJE340/ MJE350
THERMAL DATA
R
thj-case
Ther mal Resis tance Junction-case Max 6.0
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Paramet er Test Condition s Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus )
Collector Cut-off
Current (I
E
=0)
Emit ter Cut-o f f Current
=0)
(I
C
∗ Collector-Emit t er
V
=300V 100 µA
CB
V
=3V 100 µA
EB
I
= 1 mA 300 V
C
Sust aining V olt age
=0)
(I
B
h
∗
Pulsed: Pulse duration =300µs, dutycycle ≤ 2%
DC Current G ain IC=50mA VCE=10V 30 240
FE
Safe OperatingArea DeratingCurve
2/5
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