SGS Thomson Microelectronics MJE340, MJE350 Datasheet

COMPLEMETARY SILICON POWER TRANSISTORS

■ SGS-THOMSON PREFERRED SALESTYPES

■ COMPLEMENTARYPNP - NPNDEVICES

APPLICATIONS

■ LINEARANDSWITCHINGINDUSTRIAL

EQUIPMENT

DESCRIPTION

The MJE340 is a silicon epitaxial planar NPN
transistor intended for use in medium power
linear and switching applications.It is mounted in
SOT-32.

The complementaryPNP type is MJE350.

SOT-32

MJE340
MJE350

1

2

3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val ue Uni t

NPN MJE340 Unit

PNP MJE35 0 Unit

V
V

P
T

For PNP typesvoltage and current values are negative.

Collect or- E m it ter V o lt age ( IB= 0 ) 300 V

CEO

Emitt er-Base Voltage (IC = 0) 3 V

EBO

I

Collect or Current 0.5 A

C

Tot al Power Dissip at ion at T

tot

Stora ge Temperatur e -65 to 150

stg

T

Max Operating Junction T em pera t ur e 150

j

≤ 25oC 20.8 W

case

o

C

o

C

June 1997

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MJE340/ MJE350

THERMAL DATA

R

thj-case

Ther mal Resis tance Junction-case Max 6.0

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Paramet er Test Condition s Min. Typ. Max. Unit

I

CBO

I

EBO

V

CEO(sus )

Collector Cut-off
Current (I

E

=0)

Emit ter Cut-o f f Current

=0)

(I

C

∗ Collector-Emit t er

V

=300V 100 µA

CB

V

=3V 100 µA

EB

I

= 1 mA 300 V

C

Sust aining V olt age

=0)

(I

B

h

∗

Pulsed: Pulse duration =300µs, dutycycle ≤ 2%

DC Current G ain IC=50mA VCE=10V 30 240

FE

Safe OperatingArea DeratingCurve

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