SGS Thomson Microelectronics MJE3440 Datasheet
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
DESCRIPTION
The MJE3440 is a NPN silicon epitaxial planar
transistors in SOT-32 plastic package. It is
designed for use in consumer and industrial
line-operatedapplications.
MJE3440
SILICON NPN TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0)
CBO
Collector-Emitter Voltage (IB=0)
CEO
Emitter-Base Voltage (IC=0)
EBO
I
Collect or Current
C
I
Base Current
B
Total Power Dissipation at Tcase ≤ 25 oC
tot
stg Stora ge Tem perat ure
T
Max. Operati ng Junction Tem perat u r e
j
350 V
250 V
5V
0.3 A
0.15 A
15 W
-65 to +1 50
150
o
C
o
C
June 1997
1/5
MJE3440
THERMAL DATA
R
thj-case
Ther mal Res is t ance J u nct ion-cas e Max
8.33
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
CEV
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
h
f
C
CBO
∗
Pulsed: Pulse duration = 300µs, dutycycle ≤ 1.5 %
Collector Cut- of f
Current (I
E
Collector Cut- of f
Current (V
BE
Collector Cut- of f
Current (I
B
Emit ter Cut- o f f Current
=0)
(I
C
Collector-Emitter
∗
Saturation Volta ge
Base-Emitt er
∗
Saturation Volta ge
∗
Base-Emitt er V oltage I
∗
DC C urr ent G ain
Small Signal Current
fe
Gain
Tr ansistor Frequenc y
T
Collector-Base
∗
Capacit a nc e
=0)
= -1. 5V )
=0)
V
=250V
CB
=300V
V
CE
V
=200V
CE
V
=5V
EB
=50mA IB=4mA
I
C
=50mA IB=4mA
I
C
=50mA VCE=10V
C
=2mA VCE=10V
I
C
=20mA VCE=10V
I
C
IC=5mA VCE=10V
f=1KHz
=10mA VCE=10V
I
C
f=5MHz
=10V IE=0
V
CB
f=1MHz
20
500 µA
50 µA
20 µA
0.5 V
0.3 V
0.8 V
30
50 200
25
15 M Hz
10 pF
µA
Safe Operating Area DeratingCurve
2/5
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