SGS Thomson Microelectronics MJE2955T, MJE3055T Datasheet
MJE2955T
MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ COMPLEMEN TA RY PNP - NPN DEVI CES
DESCRIPTION
The MJE3055T is a silicon epitaxial-base NPN
transistor in Jedec TO-220 package. It is
intended for power switching circuits and
general-purpose amplifiers. The complementary
PNP type is MJE2955T.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
For PNP types voltage and current values are negative.
Collector-Emitter Voltage (IB = 0) 60 V
CEO
Collector-Base Voltage (IE = 0) 70 V
CBO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 10 A
I
C
Base Current 6 A
I
B
Total Power Dissipation at T
tot
Storage Temperature -55 to 150
stg
Max. Operating Junction Temperature 150
T
j
≤ 25 oC75W
case
o
C
o
C
June 1997
1/4
MJE2955T / MJE3055T
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.66
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CEX
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (V
= 1.5V)
BE
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 30 V 700 µA
V
CE
= 70 V
V
CE
T
V
T
V
150oC
CASE =
= 70 V
CBO
150oC
CASE =
= 5 V 5 mA
EBO
1
5
1
10
IC = 200 mA 60 V
Sustaining Voltage
V
∗ Collector-Emitter
CE(sat)
Sustaining Voltage
V
∗ Base-Emitter on
BE(on)
IC = 4 A IB = 0.4 A
I
= 10 A IB = 3.3 A
C
1.1
8
IC = 4 A VCE = 4 V 1.8 V
Voltage
h
f
DC Current Gain IC = 4 A VCE = 4 V
FE
Transistor Frequency IC = 500 mA VCE = 10 V
T
I
= 10 A VCE = 4 V
C
20
70
5
2 MHz
f = 500 KHz
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
mA
mA
mA
mA
V
V
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