SGS Thomson Microelectronics MJE210 Datasheet
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ PNP TRANS IS T OR
DESCRIPTION
The MJE210 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package,
designed for low voltage, low power, high gain
aydio amplifier applications.
MJE210
SILI CON PNP TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUT E MAXIMUM RATI NG S
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -40 V
CBO
Collector-Emitter Voltage (IB = 0) -25 V
CEO
Base-Emitter Voltage (IC = 0) -8 V
EBO
Collector Current -5 A
I
C
Collector Peak Current -10 A
CM
Base Current -1 A
I
B
Total Power Dissipation at T
tot
at T
Storage Temperature -65 to 150
stg
Max Operating Junction Temperature 150
T
j
case
amb
≤ 25 oC
≤ 25 oC
15
1.5
W
o
C
o
C
September 1997
1/4
MJE210
THERMAL DATA
R
thj-amb
R
thj-case
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-case Max
83.4
8.34
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
Collector-Emitter
∗
Sustaining Voltage
Collector-Emitter
∗
V
CE(sat)
V
BE(sat)
V
BE
Sustaining Voltage
Base-Emitter on
∗
Voltage
Base-Emitter on
∗
Voltage
DC Current Gain I
∗
h
FE
f
C
CBO
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%
Transistor Frequency IC = 0.1 A VCE = 10 V
T
Collector-base
Capacitance
= -40 V
V
CB
V
= -40 V T
CB
= -8 V
V
EB
I
= -10 mA
C
= -0.5 A IB = -50 mA
I
C
I
= -2 A IB = -0.2 A
C
I
= -5 A IB = -1 A
C
= -5 A IB = -1 A
I
C
=- 2 A VCE = -1 V -1.6 V
I
C
= -0.5 A VCE = -1 V
C
I
= -2 A VCE = -1 V
C
I
= -5 A VCE = -2 V
C
f = 10 MHz
CASE =
125oC
-25 V
70
45
10
65 MHz
-100
-100nAµA
-100 nA
-0.3
-0.75
-1.8
-2.5
180
VCB = -10 V IE = 0 f = 0.1 MHz 120 pF
V
V
V
V
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