SGS Thomson Microelectronics MJE13009 Datasheet
SILICON NPN SWITCHING TRANSISTOR
■ SGS-THOMSONPREFERREDSALESTYPE
DESCRIPTION
The MJE13009 is a multiepitaxial mesa NPN
transistor. It is mounted in Jedec TO-220 plastic
package, intended for use in motor controls,
switchingregulators, deflection circuits,etc.
MJE13009
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
I
P
T
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Collector-Emitter Voltage (VBE= -1.5 V) 700 V
CEV
Emitter-Base Voltage (IC=0) 9 V
EBO
Collector Current 12 A
I
C
Collector Peak Current (tp≤ 10 ms) 24 A
CM
Bas e Current 6 A
I
B
Bas e Peak Current (tp≤ 10 ms) 12 A
BM
Emitter Current 18 A
I
E
Emitter Peak Current 36 A
EM
Total Power Dissipa tion at Tc≤ 25oC 100 W
tot
Storage Temperature -65 to 150
stg
Max. Ope ratingJunct ion Temperature 150
T
j
o
C
o
C
September1997
1/6
MJE13009
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(su s)
Collector Cut-off
Current
Emitter Cut-off
Curren t (I
C
=0)
∗ Collector-Emitter
V
= rated value
CEV
V
V
V
T
V
=1.5V
BE(off )
= rated value
CEV
=1.5V
EB(off )
= 100oC
case
=9V 1 mA
EB
1
5
IC=10mA IE= 0 400 V
Sustaining Voltage
V
∗ Collecto r-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emit ter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC=5A VCE=5V
FE
f
C
Transistor Frequency IC= 500 mA VCE=10V 4 MHz
T
Output Capacitance VCB=10A IE=0
OB
IC=5A IB=1A
I
=8A IB=1.6A
C
I
=12A IB=3A
C
I
=8A IB=1.6A
C
T
= 100oC
case
IC=5A IB=1A
I
=8A IB=1.6A
C
I
=8A IB=1.6A
C
T
= 100oC
case
I
=8A VCE=5V
C
8
6
1
1.5
3
2
1.2
1.6
1.5
40
30
180 pF
f=0.1MHz
RESISTI V E LOAD
t
t
∗ Pulsed:Pulseduration = 300µs, dutycycle ≤ 2%
on
s
t
f
Turn-o n Time
Storage Time
Fall Time
V
I
Duty Cycle ≤
=125V IC=8A
CC
=-IB2=1.6A tp=25µs
B1
1%
1.1
3
0.7
mA
mA
V
V
V
V
V
V
V
µs
µs
µs
Safe OperatingAreas Derating Curve
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