SGS Thomson Microelectronics MJE13007A Datasheet
SILICON NPN SWITCHING TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH CURRENT CAPABILITY
APPLICATIONS
■ SWITCHING REGULATOR S
■ MOTOR CONTROL
MJE13007A
DESCRIPTION
The MJE13007A is silicon multiepitaxial mesa
NPN power transistor mounted in Jedec TO-220
3
2
1
plastic package.
They are inteded for use in motor control,
TO-220
switching regulators etc.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5V) 850 V
CEV
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 8 A
I
C
Collector Peak Current 16 A
CM
Base Current 4 A
I
B
Base Peak Current 8 A
BM
Emitter Current 12 A
I
E
Emitter Peak Current 24 A
EM
Total Dissipation at Tc ≤ 25 oC80W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 1997
1/4
MJE13007A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.56
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= rated V
V
CE
VCE = rated V
= 9 V 1 mA
V
EB
CEV
Tc = 100 oC
CEV
1
5
IC = 10 mA 400 V
Sustaining Voltage
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 2 A VCE = 5 V
FE
f
C
CBO
Transition Frequency IC = 0.5 A VCE = 10 V f = 1 MHz 4 MHz
T
Output Capacitance IE = 0 VCB = 10 V f = 0.1 MHz 110 pF
IC = 2 A IB = 0.4 A
I
= 5 A IB = 1 A
C
I
= 8 A IB = 2 A
C
I
= 5 A IB = 1 A Tc = 100 oC
C
IC = 2 A IB = 0.4 A
I
= 5 A IB = 1 A
C
I
= 5 A IB = 1 A Tc = 100 oC
C
I
= 5 A VCE = 5 V
C
1
1.5
3
2
1.2
1.6
1.5
8
6
40
30
RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
t
Turn-on Time VCC = 125 V IC = 5 A
on
Storage Time 3 µs
s
t
Fall Time 0.7 µs
f
I
= -IB2 = 1 A
B1
t
= 25 µs Duty Cycle < 1%
p
0.7 µs
mA
mA
V
V
V
V
V
V
V
INDUCTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
Fall Time VCC = 125 V IC = 5 A IB1 = 1 A
f
Fall Time VCC = 125 V IC = 5 A IB1 = 1 A
t
f
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %
2/4
t
= 25 µs Duty Cycle < 1%
p
t
= 25 µs Duty Cycle < 1%
p
T
= 100 oC
c
0.3 µs
0.6 µs
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