SGS Thomson Microelectronics MJE13007 Datasheet
SILICON NPN SWITCHINGTRANSISTOR
■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
■ HIGH CURRENTCAPABILITY
APPLICATIONS
■ SWITCHINGREGULATORS
■ MOTORCONTROL
MJE13007
DESCRIPTION
The MJE13007 is a silicon multiepitaxial mesa
NPN power transistor mounted in Jedec TO-220
3
2
1
plasticpackage.
It is are inteded foruse in motor control,switching
TO-220
regulators etc.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
I
I
P
T
Collector-Emitter Voltage ( VBE= -1.5V) 700 V
CEV
Collector-Emitter Voltage ( IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Current 16 A
CM
Base Current 4 A
I
B
Base Peak Current 8 A
BM
Emitter Current 12 A
I
E
Emitter Peak Current 24 A
EM
Tot al Dissipa t ion at Tc≤ 25oC80W
tot
Storage Temperature -65 to 1 50
stg
Max. O per ating Junction Tem per at u re 150
T
j
o
C
o
C
June 1998
1/4
MJE13007
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-cas e Max 1.56
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector C ut-off
Current (V
= -1.5V)
BE
Emit ter Cut-of f C urr ent
=0)
(I
C
∗ Collect or- Emitter
V
=ratedV
CE
VCE=ratedV
V
=9V 1 mA
EB
CEV
CEVTc
=100oC
1
5
IC= 10 m A 400 V
Sust aining Volt ag e
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC=2A VCE=5V
FE
C
f
CBO
Tr ansition Fr eque ncy IC=0.5A VCE=10V f=1MHz 4 MHz
T
Out put Ca pac itance IE=0 VCB= 10 V f = 0. 1 MH z 110 pF
IC=2A IB=0.4A
=5A IB=1A
I
C
=8A IB=2A
I
C
=5A IB=1A Tc=100oC
I
C
IC=2A IB=0.4A
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
=5A VCE=5V
I
C
8
6
1
1.5
3
2
1.2
1.6
1.5
40
30
RESISTIVELOAD
Symb o l Parameter Test Co n d itions M i n. Ty p . Max. Un i t
t
on
t
s
t
f
Turn-on Time VCC= 125 V IC=5A
=-IB2=1A
I
Storage Time 3ms
Fall Time 0.7 ms
B1
t
=25µs Duty Cy cle < 1%
p
0.7 µs
mA
mA
V
V
V
V
V
V
V
INDUCTIVELOAD
Symb o l Parameter Test Co n d itions M i n. Ty p . Max. Un i t
t
Fall Time VCC= 125 V IC=5A IB1=1A
f
Fall Time VCC= 125 V IC=5A IB1=1A
t
f
* Pulsed: Pulse duration = 300µs, dutycycle 2 %
2/4
=25µs Duty Cy cle < 1%
t
p
=25µs Duty Cy cle < 1%
t
p
T
=100oC
c
0.3 µs
0.6 µs
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