SGS Thomson Microelectronics MJD50 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPE
■ HIGHVOLTAGECAPABILITY
■ SURFACE-MOUNTING TO-252(DPAK)
POWERPACKAGE INTAPE &REEL
(SUFFIX”T4”)
■ ELECTRICALLY SIMILAR TO TIP50
APPLICATIONS
■ SWITCHMODEPOWERSUPPLIES
■ AUDIO AMPLIFIERS
■ GENERALPURPOSE SWITCHINGAND
AMPLIFIER
DESCRIPTION
The MJD50 is manufactured using Medium
VoltageEpitaxial Planar technology,resulting in a
rugged high performancecost-effectivetransistor.
MJD50
NPN POWER TRANSISTOR
3
1
DPAK
TO-252
(Suffix”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
January 2000
Collector-Base Voltage (IE= 0) 500 V
CBO
Collect or- E m itter Volta ge (IB= 0) 400 V
CEO
Emitter-Base Voltage ( IC=0) 5 V
EBO
Collect or Current 1 A
I
C
Collect or Peak Current (tp<5ms) 2 A
CM
I
Base Current 0.6 A
B
Base Peak Cur rent (tp<5ms) 1.2 A
BM
Total Dissipation at Tc=25oC15W
tot
Stora ge T emperat u re -65 to 150
stg
Max. Op erat ing J unction Temperature 150
T
j
o
C
o
C
1/6
MJD50
THERMAL DATA
R
thj-case
R
thj- amb
Ther mal Resi stance Junct ion-case Max
Ther mal Resi stance J unct i on- ambient Max
8.33
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus )
Collec t or Cut -of f
Current (V
BE
=0)
Collec t or Cut -of f
Current (I
B
=0)
Emit ter Cut-of f C urr ent
(I
=0)
C
∗ Collec t or- E m itter
V
=500V 0.1 mA
CE
V
=300V 0.1 mA
CE
=5V 1 mA
V
EB
I
= 30 mA 400 V
C
Sust aining Volta ge
=0)
(I
B
V
CE(sat)
∗ Collec t or -Emitter
IC=1A IB=0.2A 1 V
Sat uration Vol t age
∗ Base-Emitt er O n
V
BE(on)
IC=1A VCE=10V 1.5 V
Voltage
∗ DC Current Gain IC=0.3A VCE=10V
h
FE
f
h
Tr ansition Frequenc y IC=0.2A VCE= 10 V f= 2MHz 10 M Hz
T
Small Signal Curr ent
fe
=1A VCE=10V
I
C
IC=0.2A VCE= 10 V f= 1kHz 25
30
10
150
Gain
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
SafeOperatingArea Derating Curves
2/6
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